1. Static Random Access Memory Characteristics of Single-Gated Feedback Field-Effect Transistors.
- Author
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Cho, Jinsun, Lim, Doohyeok, Woo, Sola, Cho, Kyungah, and Kim, Sangsig
- Subjects
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FIELD-effect transistors , *STATIC random access memory , *UNIT cell , *COMPUTER-aided design , *RANDOM access memory , *ELECTRONIC feedback , *DYNAMIC random access memory - Abstract
In this paper, we propose a novel static random access memory (SRAM) unit cell design and its array structure consisting of single-gated feedback field-effect transistors (FBFETs). To verify the SRAM characteristics, the basic memory operations and write disturbances of the unit cell are investigated through the mixed-mode technology computer-aided design simulations. The unit cell exhibits the superior SRAM characteristics including a write speed of 0.6 ns, a fast read-out speed of ~0.1 ns, and a retention time of 3600 s. Furthermore, the unit cell design exhibits advantages in density, with a small cell area of 8F2, and in the power consumption; the standby power consumption is 0.24 nW/bit for holding “1” and negligible for holding “0.” Moreover, our SRAM array shows reliable ${3} \times {3}$ array operations without any disturbances. This paper demonstrates the promising potential of the FBFET SRAM for high-performance, high-density, and low-power memory applications. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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