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1. Exploring the capabilities of scanning microwave microscopy to characterize semiconducting polymers

Author

Olivier Douhéret, David Moerman, Didier Theron, MateriaNova Research Center (MNRS), Université de Mons-Hainaut, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), PCMP CHOP, ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), and European Project: 761036,H2020-NMBP-2017-two-stage,MMAMA(2017)

Subjects
Materials science, Solid-state physics, Capacitive sensing, 02 engineering and technology, Dielectric, 010402 general chemistry, lcsh:Technology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, lcsh:Chemistry, [SPI]Engineering Sciences [physics], Microscopy, General Materials Science, lcsh:QH301-705.5, Instrumentation, Nanoscopic scale, Fluid Flow and Transfer Processes, Mesoscopic physics, lcsh:T, business.industry, Process Chemistry and Technology, scanning microwave microscopy, General Engineering, 021001 nanoscience & nanotechnology, lcsh:QC1-999, 0104 chemical sciences, Computer Science Applications, charge transport, Interferometry, lcsh:Biology (General), lcsh:QD1-999, lcsh:TA1-2040, Optoelectronics, organic photovoltaics, Mach-Zehnder interferometer detection unit, lcsh:Engineering (General). Civil engineering (General), 0210 nano-technology, business, lcsh:Physics, Microwave
Abstract

International audience; Standing at the meeting between solid state physics and optical spectroscopy, microwave characterization methods are efficient methods to probe electronic mechanisms and mesoscopic transport in semiconducting polymers. Scanning microwave microscopy, augmented with a Mach-Zehnder interferometer detection unit to allow for the probing of high impedance structures was applied on poly(3-hexylthiophene-2,5-diy) and exhibited high sensitivity while operating at the nanoscale. Provided a well-defined experiment protocol, S 11 phase and amplitude signals are shown to lead simultaneously yet independently to probing the variations of the dielectric properties in the materials, i.e., conductive and capacitive properties, respectively, upon applied DC gate bias. Adjusting the operating microwave frequency can also serve to probe carrier trapping mechanisms.

Published
2020

2. Operation of near-field scanning millimeter-wave microscopy up to 67 GHz under scanning electron microscopy vision

Author

Christophe Boyaval, D. Deresmes, Gilles Dambrine, V. Avramovic, P. Polovodov, Kamel Haddadi, Didier Theron, S. Eliet, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Renatech Network, PCMP CHOP, PCMP SigmaCom, Laboratoire commun STMicroelectronics-IEMN T1, ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), European Project: 761036,H2020-NMBP-2017-two-stage,MMAMA(2017), and Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN)

Subjects
Materials science, Microscope, RF nanotechnology, business.industry, Scanning electron microscope, 020206 networking & telecommunications, Near and far field, 02 engineering and technology, law.invention, Characterization (materials science), near-Field scanning microwave microscopy (NSMM), [SPI]Engineering Sciences [physics], law, Extremely high frequency, Microscopy, 0202 electrical engineering, electronic engineering, information engineering, millimeter-wave, Optoelectronics, atomic force microscopy (AFM), Electron microscope, scanning electron microscopy (SEM), business, Microwave
Abstract

International audience; A near-field scanning millimeter-wave microscope is developed with broadband capabilities up to 67 GHz. The instrumentation has been designed to operate inside a scanning electron microscope for environment control and water meniscus elimination. Scanning electron microscopy imaging of the tip / sample interaction gives the unique possibility to limit the scan area and preserve the integrity of the probe tip. In addition, hybrid imaging considering simultaneously atomic, microwave and electron microscopy tools is beneficial for further modeling to address the quantitative characterization of nanomaterials. Experimental data are exemplary shown to demonstrate the viability of the solution proposed.

Published
2020

3. Multiport Vector Network Analyzer Configured in RF Interferometric Mode for Reference Impedance Renormalization

Author

Faisal Mubarak, K. Daffe, Kamel Haddadi, Gilles Dambrine, Etienne Okada, Didier Theron, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), VSL, Dutch Metrology Institute, Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), A C K N O W L E D G M E N T :This work is performed under EMPIR Planarcal project (http://www.planarcal.ptb.de). This work has received funding from the European Union Horizon H2020 Programme (H2020-NMBP07-2017) under grant agreement n°761036 MMAMA. This work used the facilities within the EQPX ExCELSiOR (www.excelsior-ncc.eu) funded by the National Research Agency (ANR)., and European Project: 761036,H2020-NMBP-2017-two-stage,MMAMA(2017)

Subjects
Physics, business.industry, microwave interferometry, Acoustics, multiport vector network analyzer, Process (computing), extreme impedance, 020206 networking & telecommunications, 02 engineering and technology, Interferometry, Software, vector calibration, 0202 electrical engineering, electronic engineering, information engineering, Calibration, Sensitivity (control systems), Reflection coefficient, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Electrical impedance, Microwave
Abstract

International audience; A novel active microwave interferometric technique is implemented on a multiport vector network analyzer for renormalizing the reference impedance 50 Ohms into any desired complex impedance. The resulting measured reflection coefficient around the new reference impedance is around zero, resulting in high measurement sensitivity. The method proposed avoids any external component commonly found in interferometric setups. In addition, a zeroing process including vector calibration is developed for broad frequency range and requires only a software procedure to be implemented in the system framework.

Published
2019

4. Quantitative Error Analysis in Near-Field Scanning Microwave Microscopy

Author

Petr Polovodov, Kamel Haddadi, Didier Theron, Gilles Dambrine, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Laboratoire de Physique de la Matière Condensée, Centre National de la Recherche Scientifique (CNRS), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), ACKNOWLEDGMENT This work is performed under EMPIR Planarcal project (http://www.planarcal.ptb.de). This work used the facilities within the EQPX ExCELSiOR (www.excelsior-ncc.eu) funded by the National Research Agency (ANR)., and ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011)

Subjects
Materials science, business.industry, 020206 networking & telecommunications, Near and far field, 02 engineering and technology, 01 natural sciences, Characterization (materials science), vector network analyzer (VNA), metal oxide semiconductor (MOS), 010309 optics, Wavelength, [SPI]Engineering Sciences [physics], vector calibration, 0103 physical sciences, Microscopy, near-field scanning microwave microscopy (NSMM), 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Computational electromagnetics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Nanoscopic scale, Electrical impedance, Microwave
Abstract

International audience; Near-field scanning microwave microscopy (NSMM) has to face several issues for the establishment of traceable and quantitative data. In particular, at the nanoscale, the wavelength of operation in the microwave regime appears disproportionate compared to the size of the nano-object under investigation. Incidentally, the microwave characterization results in poor electrical sensitivity as the volume of the wave/material interaction is limited to a fraction of the wavelength. In addition, the definition of nanoscale microwave impedance standards requires accurate knowledge of the material and dimensional properties at such scale. In this effort, a quantitative error analysis performed on micrometric metal oxide semiconductor (MOS) structures is proposed. In particular, atomic force microscopy (AFM) image together with the magnitude and phase-shift images of the complex microwave reflection coefficient using a Keysight TM 's LS5600 AFM interfaced directly with a vector network analyzer, without electrical matching strategy, are performed around 9.5GHz. From a detailed analysis of the raw data, completed with a FEM-based electromagnetic modeling, quantitative capacitances extraction and system limitations are exemplary shown. Keywords-near-field scanning microwave microscopy (NSMM), vector network analyzer (VNA), metal oxide semiconductor (MOS), vector calibration.

Published
2018

5. Multimodal imaging technology by integrated scanning electron, force, and microwave microscopy and its application to study microscaled capacitors

Author

Didier Theron, Olaf C. Haenssler, Sergej Fatikow, Department für Informatik [Oldenburg], Carl Von Ossietzky Universität Oldenburg = Carl von Ossietzky University of Oldenburg (OFFIS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), ACKNOWLEDGMENTSThis work was supported by the bilateral programme of Agence Nationale de la Recherche (ANR) and the DeutscheForschungsgemeinschaft (German Research Foundation,DFG) (Project GZ: FA347/48-1) and under the ANRprogram Equipex (ExCELSiOR). The authors thank IESL-FORTH, Heraklion, Greece, for manufacturing the calibration sample., ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), and Carl Von Ossietzky Universität Oldenburg

Subjects
Materials science, Microscope, Scanning electron microscope, 02 engineering and technology, 01 natural sciences, Optical imaging, law.invention, [SPI]Engineering Sciences [physics], Optics, Electromagnetism, law, 0103 physical sciences, Microscopy, Materials Chemistry, Computer software, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Instrumentation, Microscale chemistry, Optical interferometers, 010302 applied physics, business.industry, Process Chemistry and Technology, Resolution (electron density), Microwave frequencies, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Nanorobotics, Chemical elements, Microwave spectroscopy, 0210 nano-technology, business, Focus (optics), Microwave
Abstract

Extracting simultaneously multimodal nanoscale specimen information, by an integrated microscopy technology, is in the focus of this report. The combination of multiple imaging techniques allows for obtaining complementary and often unique datasets of samples under test. An instrumental setup operating under high-vacuum conditions inside the chamber of a scanning electron microscope (SEM), as a platform fusing various microscopy methods, techniques and processes, illustrates the potential of such multimodal technology. An atomic force microscope based on a compact optical interferometer performs imaging of surface topographies and a scanning microwave microscope records electromagnetic properties in the microwave frequency domain at the same time and spot. An open-source software framework, tailored for vision-based automation by nanorobotics, controls the instrument. The setup allows for simultaneously observing the region-of-interest with SEM resolution, while imaging and characterizing with evanescent microwaves and atomic forces. To validate the approach an analysis of microscale capacitors is included.Extracting simultaneously multimodal nanoscale specimen information, by an integrated microscopy technology, is in the focus of this report. The combination of multiple imaging techniques allows for obtaining complementary and often unique datasets of samples under test. An instrumental setup operating under high-vacuum conditions inside the chamber of a scanning electron microscope (SEM), as a platform fusing various microscopy methods, techniques and processes, illustrates the potential of such multimodal technology. An atomic force microscope based on a compact optical interferometer performs imaging of surface topographies and a scanning microwave microscope records electromagnetic properties in the microwave frequency domain at the same time and spot. An open-source software framework, tailored for vision-based automation by nanorobotics, controls the instrument. The setup allows for simultaneously observing the region-of-interest with SEM resolution, while imaging and characterizing with evanescent ...

Published
2018

6. [Invited]

Author

Christophe Boyaval, K. Daffe, Olaf C. Haenssler, Gilles Dambrine, Kamel Haddadi, Didier Theron, S. Eliet, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nano and Microsystems - IEMN (NAM6 - IEMN), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Renatech Network, ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN)

Subjects
Materials science, Microscope, Scanning electron microscope, business.industry, Resolution (electron density), 020206 networking & telecommunications, 02 engineering and technology, law.invention, Characterization (materials science), [SPI]Engineering Sciences [physics], Microwave imaging, law, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Electron microscope, business, Image resolution, Microwave
Abstract

International audience; A novel toolbox for hybrid nanoscale material characterization is presented. The system consists of a nano-robotic, compact and modular near-field scanning microwave microscope (NSMM) integrated into a high resolution scanning electron microscope (SEM). The instrument developed can perform hybrid characterizations by providing simultaneously atomic force, complex microwave impedance and electron microscopy images of material samples with nanometer spatial resolution. By combining the measured data, the system offers unprecedentable capabilities for tackling the issue between spatial resolution and high frequency quantitative measurements.

Published
2017

7. Near-Field Scanning Millimeter-wave Microscope Combined with a Scanning Electron Microscope

Author

Kamel Haddadi, Didier Theron, Olaf C. Haenssler, Gilles Dambrine, Christophe Boyaval, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Nano and Microsystems - IEMN (NAM6 - IEMN), Renatech Network, ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), and Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN)

Subjects
Conventional transmission electron microscope, Scanning Hall probe microscope, Microscope, Atomic de Broglie microscope, Materials science, business.industry, 020208 electrical & electronic engineering, Scanning confocal electron microscopy, 020206 networking & telecommunications, 02 engineering and technology, law.invention, Scanning probe microscopy, [SPI]Engineering Sciences [physics], Optics, law, 0202 electrical engineering, electronic engineering, information engineering, Electron beam-induced deposition, business, Environmental scanning electron microscope
Abstract

International audience; The design, fabrication and experimental validation of a novel near-field scanning millimeter-wave microscope (NSMM) built inside a scanning electron microscope (SEM) is presented. The instrument developed can perform hybrid characterizations by providing simultaneously atomic force, complex microwave impedance and electron microscopy images of a sample with nanometer spatial resolution. By combining the measured data, the system offers unprecedentable capabilities for tackling the issue between spatial resolution and high frequency quantitative measurements.

Published
2017

8. Multi-MHz micro-electro-mechanical sensors for atomic force microscopy

Author

Didier Theron, Benjamin Walter, Jean-Paul Salvetat, Jean-Pierre Aimé, Marc Faucher, Bernard Legrand, Équipe Microsystèmes électromécaniques (LAAS-MEMS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Centre de Recherche Paul Pascal (CRPP), Université de Bordeaux (UB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Chimie et Biologie des Membranes et des Nanoobjets (CBMN), Université de Bordeaux (UB)-École Nationale d'Ingénieurs des Travaux Agricoles - Bordeaux (ENITAB)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Renatech Network, ANR-12-EMMA-0039,VIBRATIONS,sondes Microsystèmes pour l'imagerie vidéo de nanosystèmes biologiques(2012), European Project: 210078,EC:FP7:ERC,ERC-2007-StG,SMART(2008), European Project: 297518,EC:FP7:ERC,ERC-2011-PoC,PROMISING(2012), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, and École Nationale d'Ingénieurs des Travaux Agricoles - Bordeaux (ENITAB)-Institut de Chimie du CNRS (INC)-Université de Bordeaux (UB)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Cantilever, Oscillation, business.industry, Analytical chemistry, 02 engineering and technology, Conductive atomic force microscopy, 021001 nanoscience & nanotechnology, 01 natural sciences, Noise (electronics), Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Vibration, Resonator, [SPI]Engineering Sciences [physics], Amplitude, 0103 physical sciences, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010306 general physics, 0210 nano-technology, business, Instrumentation, Non-contact atomic force microscopy
Abstract

International audience; Silicon ring-shaped micro-electro-mechanical resonators have been fabricated and used as probes for dynamic atomic force microscopy (AFM) experiments. They offer resonance frequency above 10 MHz, which is notably greater than that of usual cantilevers and quartz-based AFM probes. On-chip electrical actuation and readout of the tip oscillation are obtained by means of built-in capacitive transducers. Displacement and force resolutions have been determined from noise analysis at 1.5 fm/√Hz and 0.4 pN/√Hz, respectively. Despite the high effective stiffness of the probes, the tip-surface interaction force is kept below 1 nN by using vibration amplitude significantly below 100 pm and setpoint close to the free vibration conditions. Imaging capabilities in amplitude- and frequency-modulation AFM modes have been demonstrated on block copolymer surfaces. Z-spectroscopy experiments revealed that the tip is vibrating in permanent contact with the viscoelastic material, with a pinned contact line. Results are compared to those obtained with commercial AFM cantilevers driven at large amplitudes (>10 nm).

Published
2017

9. Sub-10 nm-scale capacitors and tunnel junctions measurements by SMM coupled to RF interferometry

Author

Thomas Dargent, Gilles Dambrine, Damien Ducatteau, Bernard Legrand, Didier Theron, Fei Wang, Kamel Haddadi, Nicolas Clement, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Équipe Microsystèmes électromécaniques (LAAS-MEMS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)

Subjects
Materials science, business.industry, Interference (wave propagation), Capacitance, law.invention, Scanning probe microscopy, Capacitor, Interferometry, Optics, Parasitic capacitance, law, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Electrical impedance, Microwave
Abstract

International audience; We have developed an adjustable Interferometer combined to a Scanning Microwave Microscopy (ISMM) to characterize the impedance of thousands of nanocapacitors. The adjustable interferometer allows the choice of the interference frequency within ± 50 MHz as well as the choice of the impedance range where the interference occurs. Calibration is investigated using metal-insulating-semiconductor capacitances. The ISMM allows quantitative characterization of tiny capacitors with size reaching sub-10 nm and capacitance value around the aF with a limit of resolution of about 0.5 aF at 7.8 GHz. A water meniscus parasitic capacitance is introduced to explain the discrepancy between measured and theoretical values over the 5 to 100-nm nanodot diameter range. The ISMM allows also measuring tunnel junctions made with very thin Al2O3 dielectric layers.

Published
2015

10. Measurement techniques for RF nanoelectronic devices : new equipment to overcome the problems of impedance and scale mismatch

Author

Giles Dambrine, Tuami Lasri, Henri Happy, Kamel Haddadi, Didier Theron, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Radiation, Materials science, business.industry, System of measurement, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Chip, 7. Clean energy, 01 natural sciences, [SPI]Engineering Sciences [physics], Interferometry, High impedance, Nanoelectronics, 0103 physical sciences, Electronic engineering, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Electrical impedance, Microwave, Monolithic microwave integrated circuit
Abstract

The emergence of new materials (nanowires, nanotubes, graphene tapes, and thin films) and devices with nanoscale dimensions give rise to the necessity for developing dedicated techniques that will allow their electrical characterization at high-frequency range. In this article, two possible views have been highlighted to tackle the issue of the measurement of high-impedance nanoscale devices. The first solution is based on the integration of a high-impedance reflectometer and a nanoscale device on the same chip. The microwave impedance of a single CNT has been successfully measured up to 6 GHz using this technique. The second solution consists of inserting an adjustable microwave interferometer between a traditional VNA and the high-impedance device. The interferometer allows adjustment of the impedance to be measured to the highest measurement sensitivity of the measurement system. In particular, capacitances down to 0.35 fF have been measured with an error estimated to be less than 10% using the interferometric technique combined with a scanning microwave microscope. These proofs of concept on one-port nanodevices open the route towards the case of two-port active devices with high impedance. Advances in the manufacturing of next-generation nanodevices will depend on our ability to measure electrical properties and performance characteristics accurately and reproducibly at the nanoscale regime over a broad frequency range.

Published
2014

11. Microwave reflectometry : a high-resolution technique for measuring vibration of capacitive microresonators

Author

Didier Theron, Benjamin Walter, Damien Ducatteau, Hassan Tanbakuchi, Bernard Legrand, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Microelectromechanical systems, Signal processing, Materials science, business.industry, Capacitive sensing, 01 natural sciences, Vibration, Microwave reflectometry, Resonator, Interferometry, Amplitude, 0103 physical sciences, Optoelectronics, business
Abstract

The paper proposes a novel technique for measuring the vibration of capacitive microelectromechanical resonators. Based on microwave reflectometry in the gigahertz range, the technique offers signal-to-noise ratio greater than 100 dB for the studied device and it rejects any parasitic crosstalk due to stray capacitances. Experiments demonstrate that amplitude resolution better than 10 fm/√Hz is achieved, which competes with standard optical interferometry. The technique is particularly appropriate for electrical characterization of MEMS devices but also for signal processing of resonant sensors when large-bandwidth, high signal-to-noise ratio and fully electrical detection is required.

Published
2013

12. An interferometric scanning microwave microscope and calibration method for sub-fF microwave measurements

Author

Nicolas Clement, Tuami Lasri, Kamel Haddadi, Didier Theron, Bernard Legrand, Thomas Dargent, Damien Ducatteau, Hassan Tanbakuchi, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Agilent Technologies, The Agilent Program for University Research supported this work from 2009 to 2011. The authors would like to acknowledge the IEMN cleanroom and electrical characterization staff for their constant support. The Region Nord-Pas-de-Calais supported this project under the CPER CIA research project as well as the National Research Agency (ANR) under the programme Equipex (EXCELSIOR project)., and ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011)

Subjects
Parasitic capacitance, Microscope, 02 engineering and technology, Interference (wave propagation), Electrical characterization, Nanotechnology applications, law.invention, Atomic force microscopy, Optics, law, Microscopy, 0202 electrical engineering, electronic engineering, information engineering, Calibration, Vector network analyzer, Finite-element analysis, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Instrumentation, Electrical impedance, Spectroscopy, Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Astrophysics::Instrumentation and Methods for Astrophysics, 020206 networking & telecommunications, 021001 nanoscience & nanotechnology, Capacitor, Interferometry, Nanoparticles, 0210 nano-technology, business, MOS devices, Microwave
Abstract

International audience; We report on an adjustable interferometric set-up for Scanning Microwave Microscopy. This interferometer is designed in order to combine simplicity, a relatively flexible choice of the frequency of interference used for measurements as well as the choice of impedances range where the interference occurs. A vectorial calibration method based on a modified 1-port error model is also proposed. Calibrated measurements of capacitors have been obtained around the test frequency of 3.5 GHz down to about 0.1 fF. Comparison with standard vector network analyzer measurements is shown to assess the performance of the proposed system.

Published
2013

13. Bias dependence of gallium nitride micro-electro-mechanical systems actuation using a two-dimensional electron gas

Author

Christophe Gaquiere, Marc François, Yvon Cordier, Didier Theron, Pascal Tilmant, V. Zhang, Marc Faucher, Lionel Buchaillot, Achraf Ben Amar, Damien Ducatteau, Bertrand Grimbert, M. Werquin, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Materials science, Analytical chemistry, General Physics and Astronomy, Gallium nitride, 02 engineering and technology, 01 natural sciences, law.invention, Computer Science::Robotics, Condensed Matter::Materials Science, chemistry.chemical_compound, Resonator, law, Electric field, 0103 physical sciences, 010302 applied physics, Microelectromechanical systems, business.industry, Transistor, General Engineering, 021001 nanoscience & nanotechnology, Piezoelectricity, Computer Science::Other, chemistry, Optoelectronics, 0210 nano-technology, business, Actuator, Voltage
Abstract

The piezoelectric actuation of a micro-electro-mechanical system (MEMS) resonator based on an AlGaN/GaN heterostructure is studied under various bias conditions. Using an actuator electrode that is also a transistor gate, we correlate the mechanical behaviour to the two-dimensional electron gas (2DEG) presence. The measured amplitude of the actuated resonator is maximum at moderate negative biases and drops near the pinch-off voltage in concordance with the 2DEG becoming depleted. Below the pinch-off voltage, residual actuation is still present, which is attributed to a more complex electric field pattern supported by quantitative modelling. The results confirm that epitaxial AlGaN barriers are fully adapted to the piezoelectric actuation of MEMS.

Published
2012

14. Electromechanical transconductance properties of a GaN MEMS resonator with fully integrated HEMT transducers

Author

Marc Faucher, Christophe Gaquiere, M. Werquin, Yvon Cordier, Lionel Buchaillot, Didier Theron, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Microelectromechanical systems, Materials science, business.industry, Mechanical Engineering, Transconductance, Transistor, Electrical engineering, Gallium nitride, Biasing, 02 engineering and technology, High-electron-mobility transistor, 021001 nanoscience & nanotechnology, 01 natural sciences, Piezoelectricity, law.invention, chemistry.chemical_compound, Resonator, chemistry, law, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business
Abstract

We investigate the response of a GaN microelectromechanical resonator where the strain detection is performed by a resonant high-electron mobility transistor (R-HEMT). The R-HEMT gate located above the 2-DEG (two-dimensional electron gas) appears to enable a strong control of the electromechanical response with a gate voltage dependence close to a transconductance pattern. A quantitative approach based on the mobility of the carriers induced in the device by the piezoelectric response of the GaN buffer is proposed. These results show for the first time the electromechanical transconductance dependence versus external biasing and confirm that active piezoelectric transduction is governed by the AlGaN/GaN 2-DEG transport properties.

Published
2012

15. Quantitative (artifact-free) surface potential measurements using Kelvin force microscopy

Author

Thierry Melin, Dominique Deresmes, S. Barbet, H. Diesinger, Didier Theron, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Kelvin probe force microscope, Cantilever, Materials science, business.industry, Phase (waves), 02 engineering and technology, 021001 nanoscience & nanotechnology, Electrostatics, 01 natural sciences, [SPI]Engineering Sciences [physics], Optics, Free surface, 0103 physical sciences, Microscopy, Electric potential, Atomic physics, 0210 nano-technology, business, Instrumentation, Excitation
Abstract

The measurement of local surface potentials by Kelvin force microscopy (KFM) can be sensitive to external perturbations which lead to artifacts such as strong dependences of experimental results (typically in a ∼1 V range) with KFM internal parameters (cantilever excitation frequency and/or the projection phase of the KFM feedback-loop). We analyze and demonstrate a correction of such effects on a KFM implementation in ambient air. Artifact-free KFM measurements, i.e., truly quantitative surface potential measurements, are obtained with a ∼30 mV accuracy.

Published
2011

16. AttoF MOS varactor RF measurement VNA coupled with interferometer

Author

Christophe Gaquiere, Hassan Tanbakuchi, Romain Debroucke, Damien Ducatteau, Daniel Gloria, Didier Theron, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Computer science, business.industry, 020208 electrical & electronic engineering, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, Low frequency, 7. Clean energy, Capacitance, High impedance, Interferometry, 0202 electrical engineering, electronic engineering, information engineering, Calibration, Electronic engineering, Digitally controlled oscillator, business, Varicap, Electrical impedance
Abstract

Nowadays with capabilities offered by advanced silicon technologies both for design above 60GHz and for high performance Digitally Controlled Oscillator, the use of sub fF varactor is mandatory. One of the challenge to develop this device is to be able to characterize it accurately for process optimization and modeling. In high and above all low frequency range, this type of measurement has to face with the issue of high impedance characterization and mismatch regarding 50Ω. In the RF range, Agilent is developing an interferometer module added to a VNA able to characterize very low capacitance. In this paper, we evaluate this equipment using dedicated calibration silicon structures to measure 500aF MOS varactor and compare measurement to developed electrical model.

Published
2011

17. Dispositif microélectromécanique piézoélectrique

Author

Faucher, M., Didier Theron, Christophe Gaquière, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Abstract

n° de priorité : FR20090001794 20090410 ; également publié en tant que : WO2010116061 (A1) 2010-10-14 ; EP2417645 (A1) 2012-02-15 ; FR2944274 (B1) 2012-03-02

Published
2010

18. Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

Author

Taiichi Otsuji, Wojciech Knap, Yahya Moubarak Meziani, Didier Theron, Sylvain Delage, M.A. Poisson, K. Madjour, Frederic Teppe, Nina Dyakonova, Dominique Coquillat, S. Vandenbrouk, A. El Fatimy, Christophe Gaquiere, Groupe d'étude des semiconducteurs (GES), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Nano and Microsystems - IEMN (NAM6 - IEMN)

Subjects
Materials science, Terahertz radiation, Induced high electron mobility transistor, Physics::Optics, Algan gan, Gallium nitride, 02 engineering and technology, 01 natural sciences, law.invention, chemistry.chemical_compound, Computer Science::Hardware Architecture, Computer Science::Emerging Technologies, law, 0103 physical sciences, High electron, 010302 applied physics, business.industry, Transistor, 021001 nanoscience & nanotechnology, Gate voltage, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, FLUID, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], chemistry, Logic gate, Optoelectronics, 0210 nano-technology, business
Abstract

We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.

Published
2010

19. AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Author

Wojciech Knap, A. El Fatimy, M.A. Poisson, Nina Dyakonova, Christophe Gaquiere, S. Delage, Taiichi Otsuji, Czeslaw Skierbiszewski, Pawel Prystawko, Didier Theron, S. Vandenbrouk, Yahya Moubarak Meziani, K. Madjour, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Tohoku University [Sendai], Cardiff University, Groupe d'étude des semiconducteurs (GES), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Universidad de Salamanca, Thales Research and Technologies [Orsay] (TRT), THALES [France], Institute of High Pressure Physics [Warsaw] (IHPP), and Polska Akademia Nauk = Polish Academy of Sciences (PAN)

Subjects
010302 applied physics, Electron mobility, Materials science, Waves in plasmas, business.industry, Terahertz radiation, Transistor, Wide-bandgap semiconductor, Induced high electron mobility transistor, General Physics and Astronomy, 02 engineering and technology, Plasma, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, Computer Science::Hardware Architecture, Computer Science::Emerging Technologies, law, 0103 physical sciences, Optoelectronics, 0210 nano-technology, Fermi gas, business
Abstract

We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated region of the transistor channel. Emission appears at a certain drain bias in a thresholdlike manner. Observed emission is interpreted as a result of Dyakonov–Shur plasma wave instability in the gated two-dimensional electron gas.

Published
2010

20. Calculating Kelvin force microscopy signals from static force fields

Author

Łukasz Borowik, Didier Theron, Thierry Melin, Koku Kusiaku, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Physics, Physics and Astronomy (miscellaneous), Oscillation, Atomic force microscopy, 02 engineering and technology, Static force, 021001 nanoscience & nanotechnology, Electrostatics, 01 natural sciences, Capacitance, Computational physics, [SPI]Engineering Sciences [physics], Nonlinear system, Classical mechanics, 0103 physical sciences, Microscopy, 0210 nano-technology, Nanoscopic scale
Abstract

International audience; We present an analytical formula to achieve numerical simulations of Kelvin force microscopyKFM signals from static force fields, which can be employed to describe amplitude-modulation orfrequency-modulation KFM, as well as simultaneous topography and KFM modes for which the tipprobe exhibits a nonzero oscillation during KFM imaging. This model is shown to account forside-capacitance and nonlinear effects taking place in KFM experiments, and can therefore be usedconveniently to extract quantitative information from KFM experiments at the nanoscale

Published
2010

21. 12 GHz F-max GaN/AlN/AlGaN nanowire MISFET

Author

Didier Theron, Yajie Dong, S. Vandenbrouck, Charles M. Lieber, K. Madjour, C. Gaquiere, Yat Li, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Materials science, business.industry, Wide-bandgap semiconductor, Nanowire, Heterojunction, Gallium nitride, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, Cutoff frequency, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, chemistry.chemical_compound, chemistry, 0103 physical sciences, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, 0210 nano-technology, business, MISFET, Microwave
Abstract

GaN/AlN/AlGaN/GaN nanowire metal-insulator-semiconductor field-effect transistors (MISFETs) have been fabricated for the first time with submicrometer gate lengths. Their microwave performances were investigated. An intrinsic current-gain cutoff frequency (F T) of 5 GHz as well as an intrinsic maximum available gain (F MAX) cutoff frequency of 12 GHz have been obtained for the first time and associated with a gate length of 0.5 mum. These results show the great potentiality of GaN-based nanowire FETs for microwave applications.

Published
2009

22. Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs

Author

Didier Theron, Yahya Moubarak Meziani, Pawel Prystawko, K. Madjour, Tetsuya Suemitsu, Taiichi Otsuji, Wojciech Knap, S. Vandenbrouk, C. Gaquiere, Czeslaw Skierbiszewski, Nina Dyakonova, A. El Fatimy, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Groupe d'étude des semiconducteurs (GES), Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2), and Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)

Subjects
History, Materials science, business.industry, Terahertz radiation, Transistor, Detector, 02 engineering and technology, Plasma, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Instability, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], Computer Science Applications, Education, law.invention, Terahertz spectroscopy and technology, law, 0103 physical sciences, Optoelectronics, Emission spectrum, 010306 general physics, 0210 nano-technology, Fermi gas, business
Abstract

International audience; In this work, we report on room temperature terahertz radiation from sub-micron size GaN/AlGaN based high electron mobility transistors (HEMTs). They could successfully replace the standard Fourier Transform spectrometer source and were investigated with a standard Si-bolometer as a detector. The relatively broad (~1THz) emission line was observed. The maxima were found to be tunable by the gate voltage between 0.75 and 2.1 THz. The observed emission was interpreted as due to the current driven plasma waves instability in the two-dimensional electron gas. The emitted power from a single device reached 150 nW, showing possible application of these transistors as compact sources for terahertz spectroscopy and imaging.

Published
2009

23. Characterization of carbon nanotube field effect transistors using an active load pull LSNA setup

Author

Henri Happy, Arnaud Curutchet, Gilles Dambrine, Christophe Gaquiere, Didier Theron, M. Werquin, Vincent Derycke, Damien Ducatteau, J.M. Bethoux, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), CEA- Saclay (CEA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de l'intégration, du matériau au système (IMS), and Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Microwave measurements, 02 engineering and technology, Carbon nanotube, 01 natural sciences, Signal, Active load, law.invention, CNTFETs, Computer Science::Hardware Architecture, [SPI]Engineering Sciences [physics], law, Microwave theory and techniques, 0103 physical sciences, Frequency measurement, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Non linear behavior, Monolithic microwave integrated circuit, Electronic circuit, 010302 applied physics, Microwave transistors, Non linear model, Logic gates, 021001 nanoscience & nanotechnology, Current measurement, Characterization (materials science), Logic gate, Field-effect transistor, 0210 nano-technology
Abstract

International audience; CNFETs have been characterized under large signal conditions at 600 MHz with an original active load pull setup using a LSNA. A non linear model of CNFET has been established and validated by comparison with the experimental results. Using this non linear model, design of circuits can be considered, allowing the optimization in non linear behavior.

Published
2008

24. Nitride based nanotransistors as new sources and detectors of THz radiations

Author

Christophe Gaquiere, M.A. Poisson, S. Boubanga, Bernard Gil, Alain Cappy, A. El Fatimy, Erwan Morvan, Dominique Coquillat, Gintaras Valušis, Wojciech Knap, Nina Dyakonova, Dalius Seliuta, Didier Theron, Frederic Teppe, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Materials science, Terahertz radiation, business.industry, Transistor, Detector, 02 engineering and technology, Plasma, Nitride, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, law.invention, Resonator, law, 0103 physical sciences, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, Fermi gas
Abstract

The plasma waves in gated two-dimensional electron gas have a linear dispersion law, similar to the sound waves. The transistor channel is acting as a resonator cavity for the plasma waves, which can reach frequencies in the Terahertz (THz) range for a sufficiently short gate length Field Effect Transistors (FETs). THz emission and detection by nanometer III-V transistors have been recently reported. In this work we report on THz emission and detection by nanometer GaN/AlGaN HEMTs. In particular, we show that specific GaN properties allow to observe THz emission up to room temperature. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Published
2008

25. Nonlinear characterization and modeling of carbon nanotube field-effect transistors

Author

Didier Theron, J.M. Bethoux, Gilles Dambrine, Arnaud Curutchet, Vincent Derycke, Henri Happy, Damien Ducatteau, M. Werquin, Christophe Gaquiere, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), ANR-05-NANO-0055,HF-CNT,Nano dispositifs à base de nanotubes de carbone pour applications multi-GHz(2005), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), MC2-Technologies, SOITEC SA, Laboratoire d'Electronique Moléculaire (LEM), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Materials science, CNFET, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Computer Science::Hardware Architecture, High impedance, 0103 physical sciences, Electronic engineering, Output impedance, Time domain, Electrical and Electronic Engineering, neuronal modeller, Electrical impedance, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Radiation, non linear model, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Network analyzer (electrical), [SPI.TRON]Engineering Sciences [physics]/Electronics, Nonlinear system, Nanoelectronics, LSNA, Field-effect transistor, 0210 nano-technology
Abstract

International audience; We report for the first time to our knowledge large-signal measurements performed at 600 MHz and in time domain on carbon nanotube field-effect transistors (CNFETs) using a large-signal network analyzer. To overcome the very high mismatch between the high CNFET impedance and the basic 50-Omega configuration of the setup, the output impedance was matched with the help of an experimental active load-pull configuration. Hence, we were able to observe under large-signal conditions the nonlinear behavior of CNFETs. Static measurements and continuous-wave S ij -parameter measurements were made for many different biases. They were used in order to determine a nonlinear electrical model that has been validated thanks to the nonlinear measurements. The developed model opens the way for electrical CNFET circuit simulation and nonlinear applications of these devices.

Published
2008

26. Surface potential of n- and p-type GaN measured by Kelvin force microscopy

Author

J.C. Jacquet, T. Melin, M. A. di Forte-Poisson, S. Barbet, Didier Theron, D. Deresmes, Raphaël Aubry, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Alcatel-Thalès III-V lab (III-V Lab), and THALES [France]-ALCATEL

Subjects
010302 applied physics, Kelvin probe force microscope, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Doping, Fermi level, Wide-bandgap semiconductor, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, symbols.namesake, [SPI]Engineering Sciences [physics], 0103 physical sciences, symbols, Metalorganic vapour phase epitaxy, 0210 nano-technology, Ohmic contact, Surface states
Abstract

n- and p-type GaN epitaxial layers grown by metal-organic chemical vapor deposition with different doping levels have been characterized by Kelvin probe force microscopy (KFM). To investigate the surface states of GaN beyond instrumental and environmental fluctuations, a KFM calibration procedure using a gold-plated Ohmic contact as a reference has been introduced, and the reproducibility of the KFM measurements has been evaluated. Results show that the Fermi level is pinned for n- and p-type GaN over the available doping ranges, and found 1.34±0.15eV below the conduction band and 1.59±0.18eV above the valence band, respectively.

Published
2008

27. Plasma oscillations in nanotransistors for room temperature detection and emission of terahertz radiation

Author

Didier Theron, A. El Fatimy, R. Tauk, Wojciech Knap, S. Boubanga, C. Gaquiere, Alain Cappy, Erwan Morvan, N. Dyakonova, Y. Roelens, Taiichi Otsuji, J. Lyonnet, M.A. Poisson, Sylvain Bollaert, Frederic Teppe, Andrey Shchepetov, Y. M. Meziani, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Physics, Waves in plasmas, Terahertz radiation, business.industry, Transistor, 02 engineering and technology, High-electron-mobility transistor, Electron, Plasma, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Plasma oscillation, 01 natural sciences, 7. Clean energy, law.invention, law, 0103 physical sciences, Optoelectronics, Emission spectrum, 0210 nano-technology, business
Abstract

In this work we present experimental results on room temperature terahertz (THz) detection/emission from nanotransistors as well as double grating gates structures. It shows that the emission spectra from GaN/AlGaN HEMT transistor can be successfully interpreted in the frame of the Dyakonov-Shur model which predicts that by heating/accelerating the electrons up to velocities comparable with plasma wave velocity can lead to instability and generation of plasma waves in the transistor channel. Studies of the current dependence of THz detection by InGaAs based HEMT is also presented. It is shown that in realistic transistor structures the room temperature resonant THz detection can be observed only upon applying a current high enough to produce fast/hot electrons. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Published
2008

28. Composants plasmoniques à base d'hétérojonction AlGaN/GaN pour les applications terahertz

Author

Vandenbrouck, S., Didier Theron, Jean-Francois Lampin, Desplanque, L., Zahia BOUGRIOUA, Christophe Gaquière, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2007

29. X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

Author

O. Drisse, M. Alloui, Christophe Gaquiere, M. Magis, M.-A. di Forte Poisson, Didier Theron, Sylvain Delage, N. Vellas, Raphaël Aubry, M. Laurent, N. Sarazin, M. Tordjman, Olivier Jardel, J. Di Persio, Erwan Morvan, Alcatel-Thales III-V Lab (III-V Lab ), THALES [France], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Materials science, business.industry, Transconductance, Transistor, Electrical engineering, Gate length, X band, Heterojunction, 02 engineering and technology, High-electron-mobility transistor, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, Power (physics), [SPI]Engineering Sciences [physics], law, Sic substrate, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business
Abstract

International audience; AlInN/AlN/GaN based HEMTs were fabricated on SiC substrate to demonstrate the high potentiality of these heterostructures. The presented results confirm the high performances reachable by AlInN based technology with an output power of 6.8 W/mm at 10 GHz with a gate length of 0.25 µm. A good extrinsic transconductance value of 400 mS/mm was also measured on these transistors. The results are believed to be the best power results published about AlInN/GaN HEMTs.

Published
2007

30. Caractérisation et modélisation non linéaire de Transistors à Effet de Champs à Nano tubes de Carbone (CNFETs) à l'aide d'un Analyseur de réseau non linéaire (LSNA)

Author

Arnaud Curutchet, Bethoux, J. M., Werquin, M., Henri Happy, Didier Theron, Ducatteau, D., Christophe GAQUIERE, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nano and Microsystems - IEMN (NAM6 - IEMN), Puissance - IEMN (PUISSANCE - IEMN), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), and Carbon - IEMN (CARBON - IEMN)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2006

31. Terahertz detection by GaN/AlGaN transistors

Author

Didier Theron, Michael Shur, Dmitry Veksler, S. Boubanga Tombet, Alain Cappy, Xiaobo Sharon Hu, A. El Fatimy, Qhalid Fareed, Christophe Gaquiere, R. Gaska, Dalius Seliuta, Frederic Teppe, Wojciech Knap, Nezih Pala, Gintaras Valušis, Sergey L. Rumyantsev, Groupe d'étude des semiconducteurs (GES), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Terahertz radiation, Photodetector, 02 engineering and technology, High-electron-mobility transistor, PLASMA-WAVES, 01 natural sciences, Optics, 0103 physical sciences, Electrical and Electronic Engineering, Noise-equivalent power, 010302 applied physics, Physics, business.industry, Waves in plasmas, 021001 nanoscience & nanotechnology, Cutoff frequency, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, RADIATION, Field-effect transistor, RESONANT DETECTION, FIELD-EFFECT TRANSISTORS, 0210 nano-technology, business, Noise (radio), SUB-TERAHERTZ
Abstract

Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5 THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300 K For the lowest temperatures, a resonant response was observed. The resonances were interpreted as plasma wave excitations in gated two-dimensional electron gas. Non-resonant detection was observed at temperatures above 100 K. Estimates for noise equivalent power show that these transistors can be used as efficient detectors of terahertz radiation at cryogenic and room temperatures.

Published
2006

32. Power measurement setup for large signal microwave characterization at 94 GHz

Author

Mohammed Zaknoune, Farid Medjdoub, S. Vandenbrouck, E. Delos, Christophe Gaquiere, Didier Theron, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Power gain, Power-added efficiency, Engineering, business.industry, Electrical engineering, 020206 networking & telecommunications, Tuner, 02 engineering and technology, High-electron-mobility transistor, Condensed Matter Physics, 7. Clean energy, 01 natural sciences, Power (physics), W band, Low-power electronics, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, business, Power density
Abstract

We report the development of a power measurement setup in order to characterize devices at 94GHz. A very careful calibration of the setup has been performed in order to take into account in a most accurate way the losses through the different parts of the bench and in particular through the tuner. These aware power measurements have allowed to demonstrate state of the art power results on two different devices. We reached at 94GHz an output power of 876mW/mm associated to a 7.5-dB power gain and a power added efficiency (PAE) of 33% on a pseudomorphic high electron mobility transistor (PHEMT) on GaAs substrate. We achieved a 260-mW/mm maximum output power density with 5.9-dB power gain and 11% PAE on an InAsP channel HEMT on InP substrate.

Published
2006

33. Power potentiality at 94 GHz of InP HEMTs with large band gap channels

Author

Mohammed Zaknoune, Farid Medjdoub, Xavier Wallart, Didier Theron, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Materials science, business.industry, Band gap, 020206 networking & telecommunications, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, 3. Good health, Power (physics), 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business
Abstract

We have investigated InP HEMT structures with large band gap channels for power amplification at 94 GHz. We show that structures containing InP an InAsP channels are very promising for power amplification at 94 GHz.

Published
2005

34. A high-power W-band pseudomorphic InGaAs channel PHEMT

Author

Christophe Gaquiere, P. Fellon, J. Grunenputt, Didier Theron, E. Delos, D. Jambon, M. Werquin, Damien Ducatteau, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Power gain, Power-added efficiency, Materials science, business.industry, Transistor, Electrical engineering, 020206 networking & telecommunications, High voltage, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Gallium arsenide, chemistry.chemical_compound, chemistry, W band, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Breakdown voltage, Electrical and Electronic Engineering, business
Abstract

In this letter, we present the process and power microwave measurements of 0.07-/spl mu/m Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.22/Ga/sub 0.78/As pseudomorphic high-electron mobility transistors (PHEMTs). These devices are passivated and exhibit a Ft of 125 GHz, a current density of 750 mA/mm associated to a high breakdown voltage of 4 V at open channel. Careful power measurements performed at 94 GHz have allowed to demonstrate for the first time an output power of 876 mW/mm associated with 5.7-dB power gain and a power added efficiency of 29% on a PHEMT on GaAs substrate.

Published
2005

35. InP HEMT downscaling for power applications at W band

Author

Mohammed Zaknoune, Didier Theron, Farid Medjdoub, Xavier Wallart, Christophe Gaquiere, F. Dessenne, J.-L. Thobel, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Power gain, Materials science, business.industry, Band gap, Transistor, Electrical engineering, 02 engineering and technology, High-electron-mobility transistor, 021001 nanoscience & nanotechnology, 01 natural sciences, Capacitance, Electronic, Optical and Magnetic Materials, law.invention, Barrier layer, W band, law, 0103 physical sciences, Optoelectronics, Breakdown voltage, Electrical and Electronic Engineering, 0210 nano-technology, business
Abstract

We have developed new solutions for InP high-electron mobility transistor (HEMT) scaling for power applications at W band. We have shown that the use of a small barrier thickness in order to respect the aspect ratio for a 70-nm gate length results in a significant kink effect and high gate source capacitances. We have also shown through a theoretical study that a structure containing an InP layer between the cap layer and the barrier would support both the frequency performances and the breakdown voltage. Thus, we propose an HEMT structure containing a thick InP/AlInAs composite barrier and where the gate is buried into the barrier. This enables us to respect the aspect ratio and simultaneously to obtain an important drain current density without observing any kink effect. Moreover, we have applied this process to structures containing innovative large band-gap InP and InAsP channels. We have achieved the best frequency performances ever reached for an InP channel HEMT structure. Power measurements at 94 GHz were performed on these devices. The InAsP channel HEMT demonstrated a maximum output power of 260 mW/mm at 3 V of drain voltage with 5.9-dB power gain and a power-added efficiency of 11%. These results are favorably comparable to the state-of-the-art of InP-based HEMT at this frequency.

Published
2005

36. High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

Author

N. Vellas, M. Werquin, Bertrand Boudart, J.C. De Jaeger, Virginie Hoel, Christophe Gaquiere, Yannick Guhel, Didier Theron, Sylvain Delage, Marianne Germain, MC2-Technologies, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire Universitaire des Sciences Appliquées de Cherbourg (LUSAC), Université de Caen Normandie (UNICAEN), and Normandie Université (NU)-Normandie Université (NU)

Subjects
Materials science, III-V semiconductors, Gallium nitride, 02 engineering and technology, High-electron-mobility transistor, 7. Clean energy, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], 0202 electrical engineering, electronic engineering, information engineering, Voltage source, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, Power density, wide band gap semiconductors, business.industry, 020208 electrical & electronic engineering, Linearity, 020206 networking & telecommunications, Biasing, aluminium compounds, high electron mobility transistors, intermodulation, [SPI.TRON]Engineering Sciences [physics]/Electronics, chemistry, Sapphire, Optoelectronics, gallium compounds, business, Intermodulation, power transistors
Abstract

International audience; The benefit of high drain-source bias voltages of GaN devices on sapphire substrates for high linearity applications is demonstrated. Whatever the output power densities considered, the corresponding intermodulation ratio is at least 20 dB better than usual PHEMT devices on GaAs substrates for the same power density. This study demonstrates that GaN devices are ideal candidates for applications requiring high power and high linearity behaviours simultaneously.

Published
2005

37. 1/f noise and ballistic mobility in GaN/AlGaN heterostructure field effect transistors in high magnetic fields

Author

Christophe Gaquiere, Fabien Pascal, N. Dyakonova, Alain Hoffman, Wojciech Knap, Didier Theron, Sergey L. Rumyantsev, Michael Shur, Y. Ghuel, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Physics, Electron mobility, Magnetoresistance, Condensed matter physics, business.industry, Fermi energy, 02 engineering and technology, Electron, 021001 nanoscience & nanotechnology, 01 natural sciences, Noise (electronics), Magnetic field, Semiconductor, 0103 physical sciences, 0210 nano-technology, business, Microwave
Abstract

The I-V characteristics of GaN/AlGaN HFET and 1/ f noise at 4K have been measured in strong magnetic fields, where the electron mobility is affected by geometric magnetoresistance. The magnetic field dependence of the 1/ f noise shows that the number of electrons fluctuations is the dominant mechanism of the 1/f noise and precludes the mobility fluctuations mechanism. The channel mobility extracted from the magnetoresistance data first increases with gate bias reaching the maximum value of ~(0.9 –1.0) m 2 /Vs at the 2D electron concentration of 5 × 10 12 cm -2 . This maximum value is close to the estimated ballistic mobility limit of 1.2 m 2 /Vs determined by the electron transit time with the Fermi velocity. Keywords: GaN/AlGaN, HFET, 1/f noise, magneto resistance, mobility 1. INTRODUCTION Wide band-gap semiconductors such as GaN, InN, AlN and their ternary alloys have been extensively investigated in recent years because of their potential microwave and optoelectronic applications. High electron sheet concentration in excess of 10

Published
2004

38. Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates

Author

Mohammed Zaknoune, J.-L. Thobel, F. Dessenne, Didier Theron, Farid Medjdoub, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Materials science, Monte Carlo method, Induced high electron mobility transistor, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, law, Semiconductor devices, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Materials Chemistry, Boundary value problem, Electrical and Electronic Engineering, Ohmic contact, Monte Carlo simulation, Ohmic contacts, 010302 applied physics, Boundary conditions, Condensed matter physics, 020208 electrical & electronic engineering, Transistor, Heterojunction, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, chemistry, Heterojunctions, Indium phosphide
Abstract

This paper deals with the problem of ohmic contacts modeling for Monte Carlo simulation of high electron mobility transistors (HEMT). As it is practically impossible to simulate ohmic contacts, they are replaced by boundary conditions (BC). The simulated behaviour of devices is strongly influenced by BC, especially in the case of submicron gate lengths. Standard models prescribe a neutrally charged region and are inconsistent with the presence of heterojunctions. This may lead to dramatically unphysical effects. An alternative is proposed where an equilibrium density profile is self-consistently calculated and serves as BC. The comparison of our new model with the former one has been performed and we have used experimental structures to optimise the model parameters.

Published
2004

39. Electronic properties of deep defects in n-type GaN

Author

Ch. Ulzhöfer, Didier Theron, Pierre Muret, Ch. Gacquière, Yvon Cordier, Julien Pernot, Fabrice Semond, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Arrhenius equation, Deep-level transient spectroscopy, Materials science, Doping, 02 engineering and technology, Electron, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, symbols.namesake, 0103 physical sciences, symbols, General Materials Science, Electrical and Electronic Engineering, Atomic physics, Ionization energy, Dislocation, 0210 nano-technology, Spectroscopy, Shallow donor
Abstract

The recurrent presence of deep levels in n-type hexagonal GaN films grown by metal organic chemical vapour deposition (MOCVD) is testified by Fourier transform deep level transient spectroscopy (FTDLTS) studies performed in various samples. Some of these electron traps are systematically detected with emission rates showing activation energies in the range 0.94–1.30 eV and apparent capture cross sections from 10−15 to 10−12 cm2. These properties are deduced from an Arrhenius diagram where data coming from samples of different origins are close to the same straight line, assessing a common physical identity for the corresponding defects. However, isothermal spectroscopy and trap filling kinetics characteristics contradict these capture cross section values and even show nonmonotonic variations which must be ascribed to the emission and capture rates of interactive multiple deep levels. Fine structure of the energy levels, although it is never resolved by standard FTDLTS, is indeed revealed by a high resolution DLTS method (HRDLTS) which relies on a time domain treatment of the transients recorded over a large range of time. Multiple levels are well evidenced in this way and both their ionisation energy and capture cross sections turn out to be much less than those measured by standard FTDLTS, respectively in the ranges 0.26–0.90 eV and near 10−17 cm2 on the one hand or less than 10−20 cm2 on the other hand, suggesting that these defects can capture two electrons, leading to three charge states and negative charges at least when filled with 2 electrons. Correlation of the concentration of these defects both with the shallow donor concentration and dislocation density suggest that they are due to the doping impurities in dislocation sites.

Published
2004

40. A 60 GHz high power composite channel GaInAs/InP HEMT on InP substrate with Lg=0.15 µm

Author

M. Boudrissa, X. Wallaert, J.C. De Jaeger, E. Delos, Didier Theron, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Materials science, HEMTs, Substrates, business.industry, Doping, Temperature, Electrons, High-electron-mobility transistor, Frequency, Threshold energy, Epitaxy, Indium phosphide, Gallium arsenide, Conducting materials, chemistry.chemical_compound, Impact ionization, [SPI]Engineering Sciences [physics], chemistry, Ionization, Optoelectronics, Epitaxial growth, business
Abstract

International audience; We have improved power performance by studying three different GaInAs/InP composite channel structures. Also, different gate to drain extension devices have been processed. By using composite channel devices, we benefit from the better ionization threshold energy of InP compared to GaInAs (1.69 eV against 0.92 eV). The difference of conduction band offset between the two materials (/spl Delta/E/sub C/=0.2 eV) makes possible electron transfer from GaInAs to InP layers with the same electronic properties. New process technologies have been applied to compare these structures. The gate current resulting from the impact ionization phenomena is reduced to 30 /spl mu/A at V/sub DS/=4.5 V for a large extension device, which constitute the best result among the three structures. Also, we improve power performances at 60 GHz by reducing the GaInAs channel width and substituting delta doping by bulk doping. The best device performance is 422 mW/mm at V/sub DS/=3 V and V/sub GS/=0.7 V.

Published
2001

41. A 0.15µm 60GHz high-power composite channel GaInAs/InP HEMT with low gate current

Author

E. Delos, X. Wallaert, M. Boudrissa, Didier Theron, J.C. De Jaeger, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Materials science, High-electron-mobility transistor, Indium phosphide, Microwave devices, law.invention, Gallium arsenide, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Saturation current, law, Impact ionization, Breakdown voltage, Electrical and Electronic Engineering, Ohmic contacts, HEMTs, Substrates, business.industry, Transistor, Schottky diode, MODFETs, Frequency, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, Gold, business, Current density, Power generation
Abstract

International audience; This letter presents recent improvements and experimental results provided by GaInAs/InP composite channel high electron mobility transistors (HEMT). The devices exhibit good dc and rf performance. The 0.15-μm gate length devices have saturation current density of 750 mA/mm at V/sub GS/=+0 V. The Schottky characteristic is a typical reverse gate-to-drain breakdown voltage of -8 V. Gate current issued from impact ionization has been studied in these devices, in the first instance, versus drain extension. At 60 GHz, an output power of 385 mW/mm has been obtained in such a device with a 5.3 dB linear gain and 41% drain efficiency which constitutes the state-of-the-art. These results studied are the first reported for a composite channel Al/sub 0.65/In/sub 0.35/As/Ga/sub 0.47/In/sub 0.53/As/InP HEMT on an InP substrate.

Published
2001

42. Ka band power pHEMT technology for space power flip-chip assembly

Author

Didier Theron, Raymond Quéré, Dominique Baillargeat, J.-P. Fraysse, D. Pons, S. George, D. Geiger, Laurent Escotte, Serge Verdeyme, Edouard Ngoya, S. Long, P. Fellon, N. Haese, C. Schaffauser, E. Rogeaux, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Space power, Space technology, Engineering, business.industry, Electrical engineering, Semiconductor device modeling, 020206 networking & telecommunications, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Thermal management of electronic devices and systems, High-electron-mobility transistor, 01 natural sciences, 7. Clean energy, Power (physics), Computer Science::Hardware Architecture, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Ka band, business, Flip chip
Abstract

This paper proposes a released power pHEMT process for flip-chip mounting. The potential of this flip-chip process is demonstrated for power and low-noise applications in Ka-band.

Published
2001

43. 0,1-µm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs

Author

Mohammed Zaknoune, D. Ferre, Y. Crosnier, Didier Theron, Sylvain Bollaert, Yvon Cordier, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Materials science, business.industry, Oscillation, Transconductance, 020208 electrical & electronic engineering, Relaxation (NMR), Transistor, Heterojunction, 02 engineering and technology, Condensed Matter Physics, 01 natural sciences, Cutoff frequency, Electronic, Optical and Magnetic Materials, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, business, Current density, Molecular beam epitaxy
Abstract

International audience; High performance In0.32Al0.68As/In0.33Ga0.67As double heterojunction metamorphic high electron mobility transistors (DH-MMHEMT) have been grown by molecular beam epitaxy on GaAs substrates. An inverse step metamorphic buffer has been used to reach a relaxation rate close to 98% and a mean cross hatch of 2 nm. The DH-MMHEMT structure with a gate length of 0.1 μm exhibits a peak transconductance of 750 mS mm−1, a current density of 900 mA mm−1, a current gain cutoff frequency Ft of 150 GHz and a maximum oscillation frequency Fmax of 250 GHz. These results clearly demonstrate the good electron transport properties of a double heterointerface structure due to the high relaxation, the good filtering of dislocations and the good control of the inverted InGaAs/InAlAs interface.

Published
2000

44. Low temperature grown GaAs lossy dielectric heterostructure FET

Author

K.-M. Lipka, Bertrand Boudart, C.F. Weitzel, L.L. Pond, R. Splingart, G. Salmer, Erhard Kohn, R. Westphalen, Didier Theron, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
010302 applied physics, Materials science, business.industry, 020208 electrical & electronic engineering, RF power amplifier, Heterojunction, 02 engineering and technology, Dielectric, 01 natural sciences, Gallium arsenide, [SPI.TRON]Engineering Sciences [physics]/Electronics, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], chemistry, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Dielectric loss, Radio frequency, Parasitic extraction, business, ComputingMilieux_MISCELLANEOUS, Voltage
Abstract

A lossy dielectric FET has been realized and evaluated for the first time by employing /spl sigma/-LT-GaAs. 3.5 W/mm RF power capability extracted from the DC output characteristics give evidence for a field redistribution which overcomes the power limitation of Schottky gate FET devices. 60 GHz f/sub max/ values have been obtained for 1 /spl mu/m devices. Gate-drain breakdown voltages above 30 V have been identified at 2 GHz in conjunction with a channel sheet charge of 5/spl middot/10/sup 12/ cm/sup -2/. Parasitics, specific to the lossy dielectric have been widely eliminated. However limitations specific to the /spl sigma/-LT-GaAs material need still to be overcome, which is discussed.

Published
1995

45. Photolithography for recessed lift-off technology application to low temperature GaAs MISFET’s ohmic contacts

Author

Boudart, B., Christophe Robert, Didier Theron, Westphalen, R., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
1994

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