50 results on '"Hua, Mengyuan"'
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2. Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials
3. Point-defect-driven flattened polar phonon bands in fluorite ferroelectrics
4. SPICE Modelling-Assisted evaluation of dynamic on-resistance characterization in Schottky p-GaN HEMTs amid synchronous buck transient instabilities
5. Atomic-scale smoothing of semiconducting oxides via plasma-enabled atomic-scale reconstruction
6. Bridging the gap between atomically thin semiconductors and metal leads
7. Enhancement of vacancy diffusion by C and N interstitials in the equiatomic FeMnNiCoCr high entropy alloy
8. Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth.
9. Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
10. Decisive Role of the Defect-Clustering Effect in the Variation of Magnetic Order in Diluted Magnetic Binary Metal Oxides.
11. The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices.
12. Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials.
13. Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride.
14. Gate Leakage and Reliability of GaN -Channel FET With SiNₓ/GaON Staggered Gate Stack.
15. Forecasting household electric appliances consumption and peak demand based on hybrid machine learning approach
16. Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p -Gan Gate HEMTs.
17. Two-Dimensional Ferroelectric Ga2O3 Bilayers with Unusual Strain-Engineered Interlayer Interactions.
18. Two-dimensional ferroelectric MoS2/Ga2O3 heterogeneous bilayers with highly tunable photocatalytic and electrical properties.
19. Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs.
20. Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT.
21. GaN HEMT With Convergent Channel for Low Intrinsic Knee Voltage.
22. Tunable Properties of Novel Ga2O3 Monolayer for Electronic and Optoelectronic Applications.
23. E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs.
24. Hole-Induced Degradation in E-Mode GaN MIS-FETs: Impact of Substrate Terminations.
25. Investigation of Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Under Switching Operation in Schottky-Type p-GaN Gate HEMTs.
26. Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode.
27. Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs.
28. Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel.
29. Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET.
30. Dynamic OFF-State Current (Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$) in ${p}$ -GaN Gate HEMTs With an Ohmic Gate Contact.
31. Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack.
32. Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance.
33. Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric.
34. Dependence of V\text {TH} Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET.
35. 650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode.
36. Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy.
37. Dynamic R\mathrm {ON} of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination.
38. Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer.
39. Toward reliable MIS- and MOS-gate structures for GaN lateral power devices.
40. Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT.
41. Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor.
42. Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs.
43. GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric.
44. Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation.
45. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.
46. Two-dimensional ferroelectric MoS 2 /Ga 2 O 3 heterogeneous bilayers with highly tunable photocatalytic and electrical properties.
47. Two-Dimensional Gallium Oxide Monolayer for Gas-Sensing Application.
48. Tunable Properties of Novel Ga 2 O 3 Monolayer for Electronic and Optoelectronic Applications.
49. Enhanced dielectric deposition on single-layer MoS 2 with low damage using remote N 2 plasma treatment.
50. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.
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