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1. Nanoscale Studies at the Early Stage of Water-Induced Degradation of CH3NH3PbI3 Perovskite Films Used for Photovoltaic Applications

2. Exploring the capabilities of scanning microwave microscopy to characterize semiconducting polymers

3. Electric circuit model of microwave optomechanics

4. Operation of near-field scanning millimeter-wave microscopy up to 67 GHz under scanning electron microscopy vision

5. Gallium nitride MEMS resonators: how residual stress impacts design and performances

6. Multiport Vector Network Analyzer Configured in RF Interferometric Mode for Reference Impedance Renormalization

7. Quantitative Error Analysis in Near-Field Scanning Microwave Microscopy

8. Electromagnetic Modeling in Near-Field Scanning Microwave Microscopy Highlighting Limitations in Spatial and Electrical Resolutions

9. Multimodal imaging technology by integrated scanning electron, force, and microwave microscopy and its application to study microscaled capacitors

10. Gallium Nitride as an Electromechanical Material

11. [Invited]

12. Near-Field Scanning Millimeter-wave Microscope Combined with a Scanning Electron Microscope

13. Estimation of {\pi}-{\pi} Electronic Couplings from Current Measurements

14. Multi-MHz micro-electro-mechanical sensors for atomic force microscopy

15. High speed e-beam lithography for gold nanoarray fabrication and use in nanotechnology

16. Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application

17. A 17 GHz Molecular Rectifier

18. Gallium nitride MEMS resonators: How residual stress impacts design and performances

19. Sensitivity and accuracy analysis in scanning microwave microscopy

20. Sub-10 nm-scale capacitors and tunnel junctions measurements by SMM coupled to RF interferometry

21. When capacitive transduction meets the thermomechanical limit: Towards femto-newton force sensors at very high frequency

22. Hot carrier aging degradation phenomena in GaN based MESFETs

23. Improved analytical modelling and finite element verification of stressed GaN microbeam resonators by piezoelectric actuation

24. Measurement techniques for RF nanoelectronic devices : new equipment to overcome the problems of impedance and scale mismatch

25. Enhancement-mode Al/sub 0.66/In/sub 0.34/As/Ga/sub 0.67/In/sub 0.33/As metamorphic HEMT, modeling and measurements

26. The indium content in metamorphic As/As HEMTs on GaAs substrate: a new structure parameter

27. Terahertz imaging using high electron mobility transistors as plasma wave detectors

28. Microwave reflectometry : a high-resolution technique for measuring vibration of capacitive microresonators

29. An interferometric scanning microwave microscope and calibration method for sub-fF microwave measurements

30. Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si

31. LT-GaAs with high breakdown strength at low temperature for power MISFET applications

32. Analysis and design of a multichannel HEMT gate mixer

33. Breakdown analysis of an asymmetrical double recessed power MESFET's

34. 60-GHz high power performance In/sub 0.35/Al/sub 0.65/As-In/sub 0-35/Ga/sub 0.65/As metamorphic HEMTs on GaAs

35. Bias dependence of gallium nitride micro-electro-mechanical systems actuation using a two-dimensional electron gas

36. Electromechanical transconductance properties of a GaN MEMS resonator with fully integrated HEMT transducers

37. Modeling and de-embedding the interferometric scanning microwave microscopy by means of dopant profile calibration

38. GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection

39. Quantitative (artifact-free) surface potential measurements using Kelvin force microscopy

40. AttoF MOS varactor RF measurement VNA coupled with interferometer

41. Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

42. Temperature measurements of LT GaAs diodes

43. Characterization of GaAs and InGaAs double-quantum well heterostructure FETs

44. Current instabilities in GaN-based devices

45. Dispositif microélectromécanique piézoélectrique

46. Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

47. Mapping charge transfers between quantum levels using noncontact atomic force microscopy

48. AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

49. Calculating Kelvin force microscopy signals from static force fields

50. Enhancement mode metamorphic Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As HEMT on GaAs substrate with high breakdown voltage

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