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Path tracking is critical for agricultural vehicles to achieve autonomous operation and to improve operational efficiency and accuracy. This study aims to address the high-precision path tracking requirements for the tracked vehicle GY-8. An improved pure pursuit path tracking control method is proposed to enhance the performance of path tracking. For the GY-8 vehicle's single-sided braking and steering approach, a dual-wheel differential kinematic model is established. A smooth steering method using PWM (Pulse Width Modulation) is designed to reduce the likelihood of deviation from the predetermined path due to PWM braking steering. A method based on the theory of circular arc similarity is introduced to determine the path curvature and segmentation. The NSGA-II optimisation algorithm is employed to optimise and obtain the optimal look-ahead distance for different curvature segments, thereby enhancing the accuracy of path tracking. The improved algorithm was experimentally validated for path tracking on paved surfaces. In the experiments, the improved algorithm demonstrated average error, maximum error, error standard deviation, and Fréchet distance of 0.0266 m, 0.0973 m, 0.0195 m, and 0.0891 m, respectively. This represents a 15.6%, 25.8%, 4.9%, and 27.6% improvement over the pure tracking algorithm. When applying the improved pure tracking algorithm to path tracking in agricultural orchard soil environments, the results indicated maximum error, average error, and error standard deviation of 0.1272 m, 0.0351 m, and 0.0215 m, respectively. The overall findings suggest that the improved method significantly enhances the accuracy of path tracking, providing theoretical support for advancing navigation technology in tracked vehicles. • An improved path tracking control approach proposed. • Circular arc similarity method determines curvature of each path segment. • NSGA-II optimizes look-ahead distance for varying curvatures. • Experimental results show that the algorithm performs satisfactorily. [ABSTRACT FROM AUTHOR]

Provides information on a study that focused on the use of p-channel silicon-gate metal-oxide semiconductor transistors for the examination of quantum yield of electron impact ionization in silicon. Way of injecting electrons into silicon from the polysilicon gate; Use of the carrier-separation properties of the induced junction; Examples of hot-carrier effects.

Presents information on a study which investigated the origin of the substrate current of a metal-oxide semiconductor field-effect transistor when the gate oxide undergoes Fowler-Nordheim stress. Experimental details; Results and discussion; Conclusions.

By integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate FinFETs with unprecedented levels of chip-area efficiency. This makes it suitable for ultralarge-scale integration high-performance logic at and beyond the 10-nm technology node. [ABSTRACT FROM PUBLISHER]

We present the optimization of multiple-fin-height FinFET static random access memory (SRAM) to reduce cell leakage and improve the stability and density of SRAM. Using a taller fin FinFET for the pull-down device increases the read static noise margin of the SRAM and can potentially reduce the SRAM cell area. A reasonable amount of channel doping in all the transistors can be used to reduce the cell leakage current without appreciably degrading the stability of the SRAM cell. Increasing the channel doping of the access transistor simultaneously improves the read stability and decreases the cell leakage current of the SRAM cell. [ABSTRACT FROM AUTHOR]

Proposes a semi-empirical model to quantify the tunneling currents through ultrathin gate oxides. Background physics; Formulation for the proposed model; Calibration of effective masses and other model parameters; Validation of the model; Extraction of oxide thickness using current-voltage characteristics.

The fully convolutional siamese network based trackers achieve great progress recently. Most of these methods focus on improving the capability of siamese network to represent the target. In this paper, we propose our model which focuses on estimating the state of the target with our proposed novel IoU (intersection over union) loss function which is named AIoU. Our model consists of a siamese subnetwork for feature extraction and a target estimation subnetwork for state representation. The target estimation subnetwork contains a classification head for classifying background and foreground and a regression head for estimating target. In order to regress better bounding boxes, we further study the loss function utilized in the regression head and propose a powerful IoU loss function. Our tracker achieves competitive performance on OTB2015, VOT2018, and VOT2019 benchmarks with a speed of 180 FPS, which proves the effectiveness of our method. • Powerful state estimation approaches promote Siamese trackers' performance. • Visual tracking can be decomposed to classification and regression task. • IoU loss with appropriate penalty terms leads to better regression results. [ABSTRACT FROM AUTHOR]

The ferroelectric field-effect transistor (FEFET) is an emerging nonvolatile memory technology that can offer ultra-scalability, fast operation, and reduced power consumption. However, a limited understanding of FEFET physics poses challenges for optimum device design. In this article, we provide physical insights into the operation of FinFET-based FEFETs (FEFinFETs) using a phase-field framework built on time-dependent Landau–Ginzburg (TDGL) thermodynamic theory. We exploit the source–drain fringing field to stabilize a monodomain configuration in the OFF state of short channel FEFinFETs. Based on recent experiments, we first analyze the switching dynamics of FEFinFETs with low remnant polarization (${P}_{r}$) and high coercive field (${E}_{c}$) hafnium zirconium oxide (HZO) FE. We find that the switching in these FEFinFETs occurs via domain nucleation and growth from the gate metal edges at the source–drain spacers. We also show that a non-zero drain bias can be used for dynamically modulating the memory window (MW) of FEFinFET to lower its power consumption. Furthermore, we find the spacer permittivity to be a crucial design parameter to control the MW and show that a lower spacer permittivity can significantly increase the MW. Finally, we show that the commonly held idea that a large ${P}_{r}$ leads to a large MW is not always valid. For a large ${P}_{r}$ , the formation of multiple domains in the FE layer can lead to a significant reduction in the MW. In addition, these devices can suffer from low write endurance due to exposure of the interfacial oxide layer to high electric fields. [ABSTRACT FROM AUTHOR]

Studies the sub-quarter micron metal-oxide semiconductor field effect transistors (MOSFET's) and ring oscillators at supply voltage that can be predicted from a universal mobility model. Discussion of the development of analytical equations of electron and hole mobility; Prediction and interconnect loading effect; Conclusions.

• An energy-recovery system for poultry houses was designed and tested. • 13.5% of the energy used for ventilation fans could be recovered. • The reduction of GHG emissions is estimated to be 3.01gCO2eq/egg∙year. • The system energy and GHG payback time is 3.36 years and 1.17 years, respectively. New and renewable energies are being applied in the field of livestock farming in order to reduce the increasing energy demand and to some extent provide potential alternative profits for producers. In this study, a preliminary ventilation energy-recovery system for poultry houses was investigated. The air flow that generated by the ventilation fans was accelerated by a flow-convergence configuration and the wind turbine located at the outlet of the flow tunnel was applied to recover the energy together with other electronic components. A maximum of 270 W power output from the wind turbine was steadily recorded for this small-scale experimentally-oriented system recovering 13.5 % of the energy used for ventilation. Meanwhile, about 2074kWh renewable energy per year could be produced by the system, accounting for about 10.2% of total energy requirement for poultry farming and reducing approximately 3.01 g C O 2 e q / e g g ∙ y e a r greenhouse gas emissions. Furthermore, a 3.7 % reduction of volumetric ventilation rate was also observed due to the additional pressure load from the wind turbine and no apparent difference in the power consumptions of ventilation fans was found. Furthermore, a life cycle assessment (LCA) was also performed in order to quantify the impacts of applying this system on the environment during its lifespan from 'cradle to grave'. It was demonstrated that the energy and greenhouse gas payback time were 3.36 years and 1.17 years respectively, demonstrating a 'green' and environmentally-friendly system considering the lifespan of the system was 20 years. This study suggests new ideas for the future design of poultry houses combining renewable energy and power generation technology, which is technically and environmentally feasible. [ABSTRACT FROM AUTHOR]

Fuel cell distributed drive electric tractors (FCDET) are one of the necessary means to achieve truly green agriculture. However, low traction efficiency, poor control coordination, and excessive energy consumption are the main reasons hindering the industrialization of FCDET. This paper proposed a parametric collaborative optimization design method and innovative verification system that considers the drive system and energy system. Based on the tractor plowing operating conditions, a 7-DOF coupled dynamics model of the distributed drive system and a tire-soil interaction model were established, and the key component selection and parameter matching were completed. On the drive system optimization level, the front and rear wheelside transmission ratios are optimized based on a multi-island genetic algorithm (MIGA). On the energy system optimization level, the globally optimal power distribution ratio is found based on the dynamic programming algorithm (DP). A complete experimental prototype verification system is constructed based on the MATLAB/Simulink-NI PXI joint simulation platform, physical prototype test bench, and real vehicle multi-index test platform. The results show that the average efficiencies of the optimized drive and energy system are increased by 0.38 % and 3.82 %, the total energy consumption (total hydrogen consumption) is reduced by 25.40 % and 15.39 %, respectively. The maximum fault-free operating time is 5.5h, the average traction power is 21.07 kW, and the average traction force is 10610 N in the all-wheel drive mode. The experimental results fully demonstrate that the electric tractor with the fuel cell distributed drive system as the core can meet the verification of multiple indicators. This study can provide a new theoretical basis and technical verification method for the optimal design and system control of fuel cell distributed drive electric tractors. • Parameter collaborative optimization of drive system and energy system. • Tractor multi-body dynamics model and tire-soil interaction model. • Multi-island genetic algorithm and dynamic programming algorithm. • MATLAB/Simulink-NI PXI joint simulation test, physical prototype test and real vehicle multi-indicator test. • Innovative verification method combining theoretical and experimental. [ABSTRACT FROM AUTHOR]

This paper presents an approach to enhance Hf0.5Zr0.5O2 (HZO) ferroelectric orthorhombic phase (O-phase) formation via in situ NH3 plasma treatment. High-resolution non-disruptive hard x-ray photoelectron spectroscopy confirmed that O-phase formation can be enhanced by suppressed interfacial diffusion between HZO and the top TiN electrode. Additional N-bonding facilitated by NH3 treatment was shown to suppress the interaction between TiN and HZO, thereby reducing the formation of oxygen vacancies within HZO. It was shown to improve the reliability and ferroelectric performance (examined by the leakage current and positive-up-negative-down measurements) of HZO devices. After cyclic operations, NH3-treated ferroelectric FETs (FeFETs) exhibited stable transfer characteristics and memory windows, whereas untreated devices presented unstable behaviors. Our results demonstrate the efficacy of the proposed in situ NH3-treatment scheme in enhancing the stability of HZO-based FeFETs. [ABSTRACT FROM AUTHOR]

This work investigates the S-curve engineering by exploiting the anti-ferroelectric (AFE)/ferroelectric (FE) stack negative-capacitance FinFET (NC-FinFET) to improve both the subthreshold swing and ON-state current ($I_{\text {ON}}$). The capacitance matching and ON-state performance are evaluated using a short-channel AFE/FE stack NC-FinFET model. Our study indicates that the AFE/FE gate-stack can theoretically achieve surprising improvements to the OFF-state current ($I_{\text {OFF}}$) and $I_{\text {ON}}$ relative to International Roadmap for Devices and Systems (IRDS) projections. There is a significant long-term advantage to integrated circuit (IC) power consumption and speed if materials with certain AFE and FE characteristics can be developed and introduced into IC manufacturing. [ABSTRACT FROM AUTHOR]

Reports that the experimentally confirmed accurate complementary metal oxide semiconductor (CMOS) gate delay model is applied to the CMOS ring oscillators with interconnect loading. Guidelines in choosing optimum Tox for different interconnect loading, combined with channel length and power supply scaling; Modeling and discussion; Conclusion.

Presents a simulation study of a novel self-aligned punchthrough implant for metal oxide semiconductor devices. Use of very high-energy implants; Achievement of a vertically engineered doping profile.

Broodiness, a maternal behavior, is accompanied by the atresia of follicles and the serious degradation of poultry reproductive performance. The comparison of follicles between brooding and laying hens is usually an ideal model for exploring the regulation mechanism of follicle atresia. In this study, we selected three brooding hens and three laying hens to collect their follicles for whole transcriptome sequencing. The results demonstrated different expression patterns between the follicles of brooding hens and laying hens. In the top 10 differentially expressed genes with the highest expression, MMP10 was relatively low expressed in the follicles of brooding hens, but other nine genes were relatively highly expressed, including LRR1, RACK1, SPECC1L, ABHD2, COL6A3, RPS17, ATRN, BIRC6, PGAM1 and SPECC1L. While miR-21-3p, miR-146a-5p, miR-142-5p and miR-1b-3p were highly expressed in the follicles of brooding hen, miR-106-5p, miR-451, miR-183, miR-7, miR-2188-5p and miR-182-5p were lowly expressed in brooding hen. In addition, we identified 124 lncRNAs specifically expressed in the follicles of brooding hens and 147 lncRNAs specifically expressed in the follicles of laying hens. Our results may provide a theoretical basis for further exploration of the molecular mechanism of broodiness in broilers. [ABSTRACT FROM AUTHOR]

Granulosa cell (GC) apoptosis is the main trigger of follicular atresia. MicroRNAs (miRNAs) are 18–22 nt RNAs whose function is primarily determined by their extended seed region and are considered to be involved in the biological functions of follicular development, including follicular atresia, folliculogenesis, and oogenesis. MiR-138-5p is known to act on chicken GCs. In this study, we found that miR-138-5p was enriched in reproductive organs, such as the uterus and ovaries. To examine whether miR-138-5p could regulate the biological process of GCs, miR-138-5p was examined by transfection of cells with a mimic or inhibitor of miR-138-5p. Expression levels of caspase-3 and caspase-9 mRNA and protein were markedly increased or decreased after transfection of the mimic or inhibitor, respectively. Furthermore, following miR-138-5p inhibition, SIRT1, one of the target genes of miR-138-5p, was found to increase the mRNA, which is correlated with the increased levels of BCL2 expression, an anti-apoptotic gene in the chicken GCs. These results suggest that miR-138-5p promotes apoptosis in chicken GCs by targeting SIRT1. [ABSTRACT FROM AUTHOR]

The dependence of the metal gate work function on the underlying gate dielectric in advanced metal-oxide-semiconductor (MOS) gate stacks was explored. Metal work functions on high-κ dielectrics are observed to differ appreciably from their values on SiO[sub 2] or in vacuum. We applied the interface dipole theory to the interface between the gate and the gate dielectric of a MOS transistor and obtained excellent agreement with experimental data. Important parameters such as the slope parameters for gate dielectrics like SiO[sub 2], Al[sub 2]O[sub 3], Si[sub 3]N[sub 4], ZrO[sub 2], and HfO[sub 2] were extracted. In addition, we also explain the weaker dependence of n[sup +] and p[sup +] polysilicon gate work functions on the gate dielectric material. Challenges for gate work function engineering are highlighted. This work provides additional guidelines on the choice of gate materials for future MOS technology incorporating high-κ gate dielectrics. [ABSTRACT FROM AUTHOR]

In this work, we develop an ultrathin epitaxial h-AlN as an interfacial layer (IL) between HfO2 and monolayer WS2 channel by atomic layer deposition (ALD). The growth of ultrathin dielectrics using ALD has been challenging due to the dangling-bond-free surface of 2D materials. By utilizing sub-1 nm h-AlN as an IL and depositing HfO2 high-k dielectric, we were able to form a uniform and atomically flat gate dielectric without voids. The resulting structure exhibits an equivalent oxide thickness as low as 1 nm and ultra-low leakage currents of ∼10−6 A/cm2. The fabricated top-gate WS2 transistors demonstrate on-off ratios of around 106 and subthreshold swing as low as 93 mV/dec. Furthermore, we have verified the feasibility of using h-AlN IL for a gate-all-around structure. Our work presents a CMOS-compatible low-temperature ALD process for integrating gate dielectrics, offering excellent thickness scalability and uniform coverage around monolayer WS2 nanosheets. The combination of high-quality two-dimensional dielectrics and semiconductors will contribute to the development of future high-performance and low-power electronic devices. [ABSTRACT FROM AUTHOR]

This paper examines metal–ferroelectric–insulator–semiconductor negative-capacitance FinFET (NC-FinFET) based VLSI subsystem-level logic circuits. For the first time, with the aid of a short-channel NC-FinFET compact model, we confirm the functionality and evaluate the standby-power/switching-energy/delay performance of large logic circuits (e.g., dynamic 4-bit Manchester carry-chain adder and the formal hierarchical 32-bit carry-look-ahead adder) employing 14-nm ultra-low-power NC-FinFETs. Our study indicates that the inverse Vds-dependence of threshold voltage (VT), also known as the negative drain-induced barrier lowering, of negative-capacitance field-effect transistor is not only acceptable but also beneficial for the speed performance of both the static and pass-transistor logic (PTL) circuits, especially for the PTL at low VDD. [ABSTRACT FROM AUTHOR]

Presents information on hot-carrier-induced degradation of metal-oxide-semiconductor filed-effect transistors. Electron and hole trapping and interface-trap generation; Overview of electron-trapping efficiency of the group one device gate oxide; Generation of oxide traps by electron-hole recombination in the oxide.

• It is possible to use intelligent fusion algorithm to plan temporary takeoff/landing site's location for the pesticide spraying helicopter. • The location obtained by intelligent fusion algorithm is more reasonable than that planned by manual empirical method. • The optimal temporary takeoff/landing site's location is usually at the closest vertical distance to the best dispatch route. • By planning takeoff/landing site's location, the length of dispatch routes can be reduced, thereby saving operational costs and increasing operational efficiency. Planning the temporary takeoff/landing site's location (TTSL) is an essential task faced by helicopter spraying pesticide operations in the forest. However, neither a scientific theoretical model nor a planning method do exist to address this issue. In this study, a mathematical model for a helicopter's TTSL planning is constructed, and an intelligent fusion algorithm (IWOA-IACO-CLC) is proposed based on the improved whale optimization algorithm (IWOA), improved ant colony optimization (IACO) algorithm, and combinatorial logic classifier (CLC). The fusion algorithm first adds a memory function and Lévy flight disturbance strategy to the whale optimization algorithm, which is used to enhance the global search capability of TTSL. Subsequently, the movement strategy of IACO is modified to a lateral movement within the forest and longitudinal movement between forests to calculate the fitness of the IWOA. Finally, the CLC is used to control the feasible domain of TTSL based on the idea of penalty function. In this setting, five Chinese planted forests were employed for route planning experiments, and the dispatch route length, spraying route length, and extra coverage rate obtained by the intelligent fusion algorithm and the artificial empirical method were analyzed. The results reveal that the IWOA-IACO-CLC algorithm achieves the optimal solution, and the five planned TTSL are more reasonable than those obtained by the artificial empirical method. The dispatch route is shortened by 13.26%, 3.27%, 13.40, 39.67% and 30.47%, the spraying route is shortened by 1.94%, 0.22%, 0.47%, 0.91% and 0.28%, and the extra coverage rate is decreased by 29.15%, 24.92%, 14.63%, 25.99% and 8.24%, respectively. Furthermore, the proposed mathematical model and intelligent fusion algorithm achieve the TTSL planning, while the rational TTSL planning reduces the dispatch route length and the operation cost. This study provides a theoretical basis for the TTSL planning of aerial spray helicopters, as well as a technical reference for the realization of smart forestry. [ABSTRACT FROM AUTHOR]

Focuses on a study which demonstrated a method to measure a metal oxide semiconductor (MOS) capacitor with thin gate oxide and large tunneling current. Theoretical framework of the study; Conclusion.

We fabricate n-channel silicon bulk FinFET with silicon nitride (Si3N4) high- \kappa , silicon nitride/silicon dioxide dual- \kappa , and silicon dioxide (SiO2) low- \kappa spacers, and compare their performance using measurements and TCAD simulations. While all the three devices show similar dc performance, the ac and transient performance of low- \kappa spacer FinFET is better due to lower parasitic capacitance ( {C}_{\mathrm {par}} ). We show that {C} _{\mathrm {par}} in SiO2 spacer FinFET is about half of that with Si3N4 spacer. When the gate length is scaled, the contribution of C \mathrm {par} compared with the intrinsic capacitance ( C \mathrm {ox} ) increases. For FinFET with Si3N4 spacers, C \mathrm {par}/C \mathrm {ox} increases from 36% at 30-nm gate length to 105% when the gate length is scaled to 10 nm, while for FinFET with SiO2 spacers, the ratio changes from 19% to 55% making the latter more suitable for scaling. For SiO2 spacer FinFET, inverter delay is about 13% and 25% lower than Si3N4 spacer FinFET for gate lengths of 30 and 10 nm, respectively. [ABSTRACT FROM PUBLISHER]

A stack structure for the gate electrode of metal-oxide-semiconductor (MOS) transistors is proposed, analyzed, and simulated. The stack consists of a very thin polycrystalline silicon (polysilicon) layer and metal. By changing the thickness of the polysilicon layer, one can change the effective work function of the gate. Thus, the stacked-gate structure allows for a method to continuously adjust MOS field-effect transistor threshold voltage through gate work-function engineering while retaining the proven SiO[sub 2]/polysilicon interface. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Transition metal dichalcogenides (TMDs) with only a few atoms thickness provide an excellent solution to scale down current semiconductor devices. Many studies have demonstrated that molybdenum disulfide (MoS2), a member of TMDs, is promising as a channel material to fabricate field-effect transistors (FETs). However, the carrier mobility in MoS2 FET is always far lower than the theoretical prediction. Although this poor performance can be attributed to the defects, it still lacks a quantitative analysis clarifying the correlation between carrier mobility and defect density. In this work, by using scanning tunneling microscopy, we directly counted the defects in MoS2 FETs with different carrier mobility. We found that vacancies and impurities equally contribute to carrier mobility and the total defect density induces a power-law decreasing tendency to the carrier mobility of MoS2 FET. Our current results directly prove that the reduction of point defects can exponentially improve the carrier mobility of FETs made by TMDs. [ABSTRACT FROM AUTHOR]

Previous studies have shown that the feather growth rate of chicks is determined by two alleles located on the sex chromosome Z; however, in chicken production, feathering is usually not consistently controlled by the sex chromosome. To identify whether the feathering rate is related to autosomal inheritance, whole-genome resequencing was performed in eight chickens with slow- and fast-feathering rate. A total of 54,984 autosomal single nucleotide polymorphisms (SNPs) were identified, including 393 and 376 exonic SNPs in slow-feathering and fast-feathering chickens, respectively. Mutated genes were mainly involved in response to stimuli and growth and reproduction processes. Mutated genes related to slow-feathering rate were mainly involved in wingless-type MMTV integration site signaling pathway and mitogen-activated protein kinase signaling pathway, whereas mutated genes associated with fast-feathering rate were primarily enriched in autophagy, calcium signaling pathway, extracellular matrix-receptor interaction, and Focal adhesion processes. Importantly, two SNPs, involved in feather development, were found in the exonic regions of Wnt signaling genes. These results shed new light on the relationship between genetic mutation and feather growth rate from the perspective of autosomal inheritance and may have economic significance in chicken breeding. [ABSTRACT FROM AUTHOR]

Simple Summary: A customized thermal-dynamic model was developed in the present study based on the ISO13790 Standard to predict the energy consumption of poultry houses with indoor environment control. A validation test was performed in a layer house by applying sensors and meters to record the indoor environmental parameters including temperature, relative humidity, gas concentrations and energy consumption. The validation results indicated that the simulated environmental parameters agree well with the measured data showing a similar overall trend with limited discrepancies. Meanwhile, the difference in total energy consumption between the predicted and measured value was only about 10.6%, indicating the model was able to accurately estimate the energy demand during poultry farming. The proposed model enables farmers to quickly check and optimize their management strategies to achieve precision livestock farming from the energy consumption perspective. Indoor environmental control is usually applied in poultry farming to ensure optimum growth conditions for birds. However, these control methods represent a considerable share of total energy consumption, and the trend of applying new equipment in the future for precision livestock farming would further increase energy demand, resulting in an increase in greenhouse gas emissions and management costs. Therefore, to ensure optimum efficiency of both energy use and livestock productivity, a customized hourly model was developed in the present study to interpret and analyze the electronically collected data. The modules for estimating indoor gas concentrations were incorporated into the present model, as this has not been properly considered in previous studies. A validation test was performed in a manure-belt layer house using sensors and meters to measure the indoor environmental parameters and energy consumption. The predicted results, including indoor temperature, relative humidity, carbon dioxide and ammonia concentrations, showed good agreement with the measured data, indicating a similar overall trend with acceptable discrepancies. Moreover, the corresponding differences between the measured and simulated energy consumption for heating, tunnel ventilation and base ventilation were 13.7, 7.5, and 0.1%, respectively. The total energy demand estimated by the model showed a limited discrepancy of approximately 10.6% compared with that measured in reality. Although human factors, including inspection, cleaning, vaccination, etc., were not included in the model, the validation results still suggested that the customized model was able to accurately predict the indoor environment and overall energy consumption during poultry farming. The validated model provides a tool for poultry producers to optimize production planning and management strategies, increase the production rate of unit energy consumption and achieve precision livestock farming from an energy consumption standpoint. [ABSTRACT FROM AUTHOR]

In this brief, we present a compact model of nanoscale ferroelectric (FE) capacitors. We first use the phase-field simulation to study the polarization switching of very small FE capacitor that contains only a few grains. We show that at higher applied voltage, the entire grain undergoes a single-domain-like switching, but at lower applied voltage, the domain wall growth mechanism dominates due to the difference between the domain wall energies of bulk and defect nuclei. To create a compact model that includes this voltage dependence, we use a time-dependent domain switching model for each discrete grain with empirical modifications capturing the two different switching mechanisms. In addition, a voltage-dependent dielectric model is included to represent the nonlinear capacitance of the FE capacitor. We verify this compact model by fitting the results of phase-field modeling results with excellent agreement. [ABSTRACT FROM AUTHOR]

A new deep learning (DL)-based parameter extraction method is presented in this brief; 50k training cases are generated by Monte Carlo simulations of these preselected parameters in Berkeley short-channel IGFET model (BSIM)-common multigate (CMG). DL models are trained using backward propagation with ${C} _{\text {gg}} - {V} _{g}$ and ${I} _{d} - {V} _{g}$ as the input and selected BSIM-CMG parameters as the output. A TCAD simulated FinFET device, calibrated to Intel 10-nm node, is used to test the DL models. The DL-based parameters extraction results show an excellent fit to capacitance and drain current data, with 0.16% rms error in ${C} _{\text {gg}} - {V} _{g}$ and 6.1% rms error in ${I} _{d} - {V} _{g}$ (0.69% rms error in above-threshold-voltage ${I} _{d} - {V} _{g}$), respectively. In addition, devices with a 10% variation in gate length and oxide thickness are successfully modeled with the trained DL model. The results show tremendous promise in using the DL-based models for parameter extraction. [ABSTRACT FROM AUTHOR]

• A single neural network parameter extractor for BSIM-CMG IV and CV model is developed. • A global I-V and C-V parameter extraction for a large range of gate length is achieved. • A high fitting accuracy is demonstrated on TCAD simulated data calibrated to 10 nm node. A global I-V and C-V BSIM-CMG parameter extraction methodology based on deep learning is proposed. 100 k training datasets were generated through Monte Carlo simulation varying 28 IV and CV model parameters in the industry-standard BSIM-CMG FinFET model. For each of the 100 k Monte Carlo-selected BSIM-CMG parameter dataset, the I D -V G and C GG -V G characteristics of seven Monte Carlo-selected gate lengths ranging from 14 nm to 110 nm were generated as the input to train the parameter extraction neural network. The neural network outputs for training are the 28 model parameters' values. The neural network's capability to extract BSIM-CMG model parameters that accurately fit TCAD-generated I D -V G and C GG -V G data over a range of gate lengths was demonstrated. This marks the first time a deep learning compact model parameter extraction flow, employing a single neural network for both I-V and C-V parameters and for a range of gate length, is presented. [ABSTRACT FROM AUTHOR]

A simulator using a coupled Schro¨dinger equation, Poisson equation and Fermi–Dirac statistics to analyze inversion layer quantization is shown to match the measured capacitance versus voltage data of thin oxide gate metal-on-insulator capacitance closely. The effects of bias voltage, oxide thickness and doping concentration on the charge centroid are presented. A simple empirical model for the alternating current charge centroid of the inversion layer is proposed. This model predicts the in-version layer capacitance or charge centroid in terms of T[sub ox] (oxide thickness), V[sub t] (threshold voltage), and V[sub g] (gate voltage) explicitly. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We report the demonstration of growing two-dimensional (2D) hexagonal-AlN (h-AlN) on transition metal dichalcogenide (TMD) monolayers (MoS2, WS2, and WSe2) via van der Waals epitaxy by atomic layer deposition (ALD). Having atomically thin thickness and high theoretical carrier mobility, TMDs are attractive semiconductors for future dense and high-performance 3D IC, and 2D hexagonal boron nitride (h-BN) as a gate dielectric is known to significantly improve TMD device performance. However, h-BN growth requires 1000 °C temperature that is not compatible with CMOS fabrication, and ALD deposition of any high-k 2D insulator on TMD continues to be an elusive goal. The epitaxial 2D layered h-AlN by low-temperature ALD is characterized by synchrotron-based grazing-incidence wide-angle x-ray scattering and high-resolution transmission electron microscopy. In addition, we demonstrate the feasibility of using layered h-AlN as an interfacial layer between WS2 and ALD HfO2. The significantly better uniformity and smoothness of HfO2 than that directly deposited on TMD are desirable characteristics for TMD transistor applications. [ABSTRACT FROM AUTHOR]

In this article, we present a compact model of metal–ferroelectric (FE)–insulator–semiconductor (MFIS) tunnel junction. Unlike the metal–FE–metal (MFM) structure with only one insulator layer, MFIS–FE tunnel junction (FTJ) contains two insulator layers and a semiconductor electrode. The complex structure makes it difficult to self-consistently solve the Poisson and charge equations. We report the first compact model of MFIS-FTJ to our knowledge. Previous modeling studies focused on numerical simulation, which is time-consuming and not applicable to circuit simulation. The presented compact model is suitable for commercial SPICE IC simulation. It includes a FE model that can capture polarization switching under arbitrary applied voltage, an insulator–semiconductor model that calculates the potential profile of the MFIS stack, and an analytical tunneling current model. We demonstrate that this model can be used to simulate and fit both n-type and p-type MFIS-FTJs. [ABSTRACT FROM AUTHOR]

The Tibetan chicken (Gallus gallus) provides high quality protein and iron for humans, which shows many phenotypic adaptations to the low oxygen. Study of the genetic mechanisms of circular RNAs (circRNAs) in hypoxia adaptation has not been reported. Four embryonic heart tissue samples from Tibetan chickens and Daheng broilers were collected. Differentially expressed circRNAs (DEcircRNAs) were identified via high-throughput sequencing. Bioinformatic analysis was used to indicate the functions and pathways of the DEcircRNAs. A total of 29 DEcircRNAs were identified between 4 Tibetan chickens and 4 Daheng broilers, including 15 upregulated and 14 downregulated DEcircRNAs in Tibetan chickens. GO analysis revealed that the DEcircRNAs were mainly involved in lung development or oxygen metabolism, such as ubiqunegative regulation of mesenchymal cell proliferation involved in lung development, oxidoreductase activity, and peroxisome. Pathway analysis showed that DEcircRNAs were mainly enriched in oxidative phosphorylation, tight junction, VEGF/MAPK/PPAR/Ras/PI3K-Akt signaling pathway. We also constructed a circRNA-miRNA-mRNA-pathway network to visualize the regulatory relationship associated with hypoxia adaptation of the tight junction pathways. The circRNA expression profile was obtained to complement the current Tibetan chicken circRNA database and provides new information for future studies into biological adaptation to hypoxic stress in the Tibetan chicken. [ABSTRACT FROM AUTHOR]

Simple Summary: Hourly manure coverage proportion and area on the manure belt are key parameters for estimating ammonia emissions in poultry houses in order to provide environmental control suggestions and achieve the goals of precision poultry farming. In this study, experimental measurements were performed, and binary images were applied to provide new insights into the projected hourly manure coverage area on the manure belt at different layer hen ages. It was demonstrated that manure coverage proportion and area measured at different laying hen ages showed similar trends and values with four distinct stages within 48 h. In addition, statistical analyses found no significant correlation between the hourly increment of manure weight and the hourly increment of manure coverage proportion. The results from the present study are expected to serve as a fundamental input parameter for ammonia emission modeling to more accurately simulate the hourly indoor environment and provide effective mitigation strategies. The main advantage of having livestock, for example, the laying hens, in a controlled environment is that the optimum growth conditions can be achieved with accuracy. The indoor air temperature, humidity, gases concentration, etc., would significantly affect the animal performance, thus should be maintained within an acceptable range. In order to achieve the goals of precision poultry farming, various models have been developed by researchers all over the world to estimate the hourly indoor environmental parameters so as to provide decision suggestions. However, a key parameter of hourly manure area in the poultry house was missing in the literature to predict the ammonia emission using the recently developed mechanistic model. Therefore, in order to fill the gap of the understanding of hourly manure coverage proportion and area on the manure belt, experimental measurements were performed in the present study using laying hens from 10 weeks age to 30 weeks age. For each test, six polypropylene (pp) plates were applied to collect the manure dropped by the birds every hour, and photographs of the plates were taken at the same time using a pre-fixed camera. Binary images were then produced based on the color pictures to determine the object coverage proportion. It was demonstrated that for laying hens of stocking density around 14 birds/m2, the manure coverage proportion at the 24th hour after the most recent manure removal was about 60%, while the value was approximately 82% at the 48th hour. Meanwhile, for laying hens at different ages, the hourly increment of manure coverage proportion showed a similar pattern with four distinct stages within 48 h. The statistical analyses demonstrated no significant correlation between the hourly increment of manure weight and the hourly increment of manure coverage proportion. Finally, prediction models for estimating the hourly manure coverage proportion on the manure belt in typical laying hen houses were provided. [ABSTRACT FROM AUTHOR]

• Negative capacitance (NC) may enable gate-all-around FET scaling beyond 0.5 nm node. • 3-D Ginzburg-Landau-Khalatnikov model is adopted in the TCAD simulation. • The parameters of ferroelectric are extracted from an experimental C-V result. • The NC benefits are retained over a varying set of ferroelectric parameters. We present a TCAD simulation of the negative capacitance gate-all-around (NCGAA) field-effect transistor with the 3-D Ginzburg-Landau-Khalatnikov Model. The baseline device is based on the 2020 IRDS Table, and the mobility model is calibrated to account for ballistic transport and to match the "1.5 nm node" IRDS on-current requirement. The NC parameters are extracted from experimental C-V data. The NC-GAA shows reduction in the off current by one order of magnitude and a 40% on-current boost. If the gate work function is shifted to align the NC-GAA's off-current with the IRDS high performance requirement, it is shown that NC-GAA can achieve the on-current and V DD requirement of every node through the "0.7 eq node," which is the last node predicted in the 2020 IRDS Table. Furthermore, NC-GAA can even achieve a "0.5 eq node," which is three additional nodes beyond the baseline "1.5 nm node." We also show that these benefits are retained over a varying set of ferroelectric parameters. [ABSTRACT FROM AUTHOR]

EEPROM devices with either N-type or P-type floating gate were fabricated and characterized. Program/erase speeds and stress-induced leakage current-related retention characteristics for both types of devices are explained. Discrepancies between previously published reports of P-type floating gate devices and PMOS gate current measurements are resolved. The feasibility of integrating P-type floating gate EEPROMs in high density memory arrays is examined. [ABSTRACT FROM AUTHOR]

A single-crystal islands (SCI) technique using low thermal budget pulse laser process is proposed and demonstrated to fabricate single-crystal silicon islands over amorphous dielectric for monolithic 3-D and back-end-of-line (BEOL) FinFET circuits. By laser recrystallizing mask-defined a-Si islands encapsulated with conformal silicon nitride film, designed single-crystal Si islands can be obtained. The single crystallinity of the island are verified with SECCO Etch, high-resolution electron microscopy (HREM), transmission electron microscopy (TEM), and electron backside scattering (EBSD). About 40 nm FinFETs were successfully fabricated in the SCI Si islands and shown to exhibit excellent electrical performance and low variability that are compatible with the FinFETs fabricated on commercial silicon-on-insulator (SOI) wafer. [ABSTRACT FROM AUTHOR]

We present a compact model of polycrystalline ferroelectric (FE) capacitors. The polycrystalline thin-film material is modeled as a collection of independent grains or grain groups. Each grain or grain group is characterized by its local field-dependent switching rate, which is characterized by a distribution function such as Gaussian or type-2 generalized beta distribution. This computationally efficient model accurately reproduces the published experimental polarization switching waveforms and the switching current waveforms in response to all reported applied voltage waveforms. The model tracks the polarization history so that it can simulate the transition between major and minor and among minor loops as well as accumulative polarization which cannot be captured by the conventional models. This model is intended for simulating circuits containing FE capacitors using commercial SPICE simulators for arbitrary applied voltage waveforms. It also has the capability of simulating the discrete switching and device variability in small-area FE capacitors having a small number of grains, although there is no available experimental data to check the model accuracy in this regard. [ABSTRACT FROM AUTHOR]

We present compact models that capture published cryogenic temperature effects on silicon carrier mobility and velocity saturation, as well as fully depleted silicon on insulator (FDSOI) and fin field effect transistor (FinFET) devices characteristics within the industry-standard Berkeley short-channel IGFET model (BSIM) framework for cryogenic IC applications such as quantum computing. For the core model charge density/surface potential calculation, we introduce an effective temperature formulation to capture the effects of the band tail states. We also present a compact model that corrects the low-temperature threshold voltage for the band-tail states, Fermi–Dirac statistics, and interface traps. New temperature-dependent mobility and velocity saturation models are accurate down to cryogenic temperature. In addition, we propose that experimentally observed ${I}_{D}$ dependence of subthreshold swing (SS) at cryogenic temperatures is a consequence of the expectedly higher rate of Coulomb scattering of free carriers. [ABSTRACT FROM AUTHOR]

A spacer lithography technology using a sacrificial layer and a chemical vapor deposition (CVD) spacer layer has been developed, and is demonstrated to achieve sub-40 nm structures with conventional dry etching. The minimum-sized features are finished not by photolithography but by the CVD film thickness. Therefore the spacer lithography technology yields critical dimension variations of minimum-sized features which are much smaller than achieved by optical or e-beam lithography. It also provides a doubling of device density for a given lithography pitch. This spacer lithography technology is used to pattern silicon-fin structures for double-gate MOSFETs and CMOS FinFET results are reported. [Copyright &y& Elsevier]

We review the development of the anode hole injection (AHI) model for reliability projection of the silicon dioxide gate dielectric. The experimental and theoretical foundation of the AHI model is presented. Recent development and implications for the reliability of ultra-thin oxides are discussed. AHI is used to illuminate the questions of E versus 1/E models and field-driven versus voltage-driven models. Building on the concept of effective thinning, the AHI model is applied for the interpretation of defect-induced breakdown data and for optimizing oxide screening conditions. Circuit level reliability projection as a function of operating time, temperature, and power supply voltage is also illustrated. [ABSTRACT FROM AUTHOR]

In this article, we analyze how a ferroelectric (FE) acts as a rechargeable energy storage medium which stores, releases, and retrieves energy, and helps the gate achieve a desired charge density with reduced energy (voltage) from the external gate drive. During transistor turn-on, the FE releases energy, while the whole system is absorbing energy, and during turn-off, the FE retrieves energy, while the whole system is releasing energy. Capacitor energy is analyzed using two different approaches: static material free energy integrals and transient circuit power integrals. The two results agree within 1%. Energy analysis is also performed for a metal–oxide–semiconductor field-effect transistor structure for two gate lengths, 20 nm and 2 μm, in an inverter circuit. At 2-μm gate length, the values of energy match under these two different approaches with less than a 6% difference. The difference is larger in the 20-nm gate length case due to larger parasitic capacitances, such as gate-to-drain and gate-to-source capacitance, affecting the transient circuit analysis. Even so, most of the energy storage and retrieval benefit is retained even in small size negative capacitance transistors. [ABSTRACT FROM AUTHOR]

Measurements on ultrathin body negative-capacitance (NC) field-effect transistors are shown to display subthreshold behaviors that cannot be explained as a classical MOSFET. Subthreshold swing (SS) at low drain bias decreases with increased gate bias for devices measured over multiple gate lengths down to 30 nm. In addition, improvement in the SS relative to control devices shows a nonmonotonic dependence on the gate length. Using a Landau–Khalatnikov ferroelectric (FE) model calibrated with measured Capacitance-Voltage and combining it with TCAD simulations, we show that these anomalous behaviors can be quantitatively explained and interpreted as field-induced permittivity enhancement. The model predicts substantial scaling improvement at the end of the roadmap. [ABSTRACT FROM AUTHOR]

The feather growth rate in chickens included early and late feathering. We attempted to characterize the genes and pathways associated with the feather growth rate in chickens that are not in agreement with Mendelian inheritance. Gene expression profiles in the hair follicle tissues of late-feathering cocks (LC), early-feathering cocks (EC), late-feathering hens (LH), and early-feathering hens (EH) were acquired using RNA sequencing (RNA-seq), mass spectrometry (MS), and quantitative reverse transcription PCR (qRT‑PCR). A total of 188 differentially expressed genes (DEGs) were ascertained in EC vs. LC and 538 DEGs were identified in EH vs. LH. We observed that 14 up-regulated genes and 9 down-regulated genes were screened both in EC vs. LC and EH vs. LH. MS revealed that 41 and 138 differentially expressed proteins (DEPs) were screened out in EC vs. LC and EH vs. LH, respectively. Moreover, these DEGs and DEPs were enriched in multiple feather-related pathways, including JAK-STAT, MAPK, WNT, TGF-β, and calcium signaling pathways. qRT-PCR assay showed that the expression of WNT8A was decreased in LC compared with EC, while ALK and GRM4 expression were significantly up-regulated in EH relative to LH. This study helps to elucidate the potential mechanism of the feather growth rate in chickens that do not conform to genetic law. [ABSTRACT FROM AUTHOR]

A new deep-learning-based parameter extraction for a global (multiple gate lengths) BSIM-CMG drain-current model is presented in this paper. The approach starts with generating 300K training dataset, consisting of 778 million data points to train the deep learning engine. Training data is generated by Monte Carlo simulation. The I-V data and the device geometry information from multiple devices serve to train a deep-learning (DL) model to predict BSIM-CMG parameters. The performance of DL-based extraction is verified by using the trained DL model to extract parameters of 10 nm FinFET technology simulated with TCAD. The DL-extracted BSIM-CMG model shows a good accuracy for eight different gate-lengths. The created BSIM-CMG global model was also able to reproduce the scalability in key electrical performance parameters such as off current I o f f , saturation current I s a t , linear current I l i n and the threshold voltage in linear V t h , l i n and saturation V t h , s a t conditions. The developed solution significantly reduces the model extraction time for a global BSIM-CMG model. This new technique can expedite the development of process design kits (PDK). • Automatic parameter extraction of BSIM-CMG I-V global parameters. • Tested on TCAD simulated data calibrated to Intel 10 nm node with gate lengths from 16 nm to 100 nm. • Created global model captures the trends in I-V data and key electrical parameters accurately. [ABSTRACT FROM AUTHOR]

Drain-extended MOSFET (DEMOS) with halo implant induced laterally asymmetric channel doping shows anomalous characteristics across bias and temperature that cannot be captured by existing models. The transconductance (gm) maxima in the linear region is found to be not only a function of the peak mobility but also the halo doping density. In the saturation region, the gm characteristics show a nonmonotonic “hump” induced by the halo-region/channel-region junction barrier. Another key care-about for analog design - the drain current (ID) mismatch, also exhibits unique characteristics with excess mismatch in the weak-inversion (WI) region, in particular at low temperature. In addition, the anomalous flicker noise (1/ƒ noise) trends in the presence of high-trap density in the halo region of halo-implanted DEMOS are also discussed. In this work, we propose an analytical model based on the equivalent conductance and impedance field theory to capture these effects. The proposed model is in good agreement with measurements and numerical device simulations using technology computer-aided design (TCAD) of DEMOS across a different oxide thickness, geometry, bias, and temperature. [ABSTRACT FROM AUTHOR]

Nanosheet gate-all-around transistors are analyzed for RF applications using calibrated TCAD simulations. The effects of stack spacing and number of stacks on device performance are studied and a substack design for improved RF performance is proposed. The novel substack design can improve cut-off frequency (Ft) by ~10% and minimum number of substacks and minimum substack spacing should be used. [ABSTRACT FROM AUTHOR]

In this article, we will analyze and provide new insights into the polarization gradient effect of a ferroelectric using TCAD simulation and demonstrate how to model the polarization gradient effect using the negative capacitance FET (NCFET) compact model based on the BSIM framework. A larger value of g (the coefficient of polarization gradient effect) results in improved subthreshold slope, smaller OFF-current, smaller drain-induced barrier lowering (DIBL), and smaller output conductance. Inclusion of the polarization gradient effect in the NCFET compact model improves usability because it accurately captures the effects of negative DIBL and negative output conductance. [ABSTRACT FROM AUTHOR]